Polycrystalline silicon solar cells on metallurgical silicon substrates

1976 ◽  
Vol 15 (6) ◽  
pp. 530
Solar Cells ◽  
1981 ◽  
Vol 5 (1) ◽  
pp. 29-38 ◽  
Author(s):  
T.L. Chu ◽  
Shirley S. Chu ◽  
L.L. Kazmerski ◽  
Ray Whitney ◽  
C.L. Lin ◽  
...  

1995 ◽  
Vol 378 ◽  
Author(s):  
R.R. Bilyalov ◽  
B.M. Abdurakhmanov

AbstractThe effect of hydrogen passivation on photovoltaic performance of 1 MeV electron irradiated polycrystalline cast silicon solar cells is described. These cells were processed on cast p-type boron doped polycrystalline silicon substrates using standard technology. Passivation was made by low-energy hydrogen ion implantation on the front side. Cells performance was measured as a function of fluence, and it was found that the hydrogenated cell had the higher radiation resistance.Defect behavior were studied using deep level transient spectroscopy and infra-red spectroscopy. It was shown that the concentration of vacancies (Ec −0,09 eV), divacancies (Ec −0,23 eV) and A-centers (Ec −0,18 eV) is significantly lower in hydrogenated samples. This consistency strengthens the belief that hydrogen interacts with vacancy-type defects to prevent formation of the secondary radiation defects. It is confirmed by IR-measurements.


2012 ◽  
Vol 21 (6) ◽  
pp. 1377-1383 ◽  
Author(s):  
Jonathon Dore ◽  
Rhett Evans ◽  
Ute Schubert ◽  
Bonne D. Eggleston ◽  
Daniel Ong ◽  
...  

Solar Energy ◽  
2018 ◽  
Vol 174 ◽  
pp. 628-639 ◽  
Author(s):  
D.M. Fébba ◽  
R.M. Rubinger ◽  
A.F. Oliveira ◽  
E.C. Bortoni

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