Electrical characterization of ion-implanted silicon-on-sapphire

1984 ◽  
Vol 24 (4) ◽  
pp. 825
Keyword(s):  
Electrical Characterization ◽  
Ion Implanted

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted

Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide

2000 ◽  
Vol 77 (10) ◽  
pp. 1478-1480 ◽  
Author(s):  
S.-K. Lee ◽  
C.-M. Zetterling ◽  
E. Danielsson ◽  
M. Östling ◽  
J.-P. Palmquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Aluminum Ion ◽  
Ion Implanted

Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes

2003 ◽  
Vol 433-436 ◽  
pp. 621-624
Author(s):  
Antonella Poggi ◽  
Roberta Nipoti ◽  
G.C. Cardinali ◽  
Francesco Moscatelli
Keyword(s):  
Electrical Characterization ◽  
Ion Implanted

Structural and electrical characterization of n+-type ion-implanted 6H-SiC

2004 ◽  
Vol 27 (1-3) ◽  
pp. 239-242 ◽  
Author(s):  
D. Goghero ◽  
F. Giannazzo ◽  
V. Raineri ◽  
P. Musumeci ◽  
L. Calcagno
Keyword(s):  
Electrical Characterization ◽  
Ion Implanted

Electrical characterization of Si-ion implanted AlxGa1-xN annealed at lower temperatures

2006 ◽  
Vol 203 (7) ◽  
pp. 1650-1653
Author(s):  
Mee-Yi Ryu ◽  
Y. K. Yeo ◽  
T. W. Zens ◽  
M. A. Marciniak ◽  
R. L. Hengehold ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Ion Implanted

Electrical characterization of arsenic‐ion‐implanted semi‐insulating GaAs by current‐voltage measurement

1994 ◽  
Vol 65 (25) ◽  
pp. 3272-3274 ◽  
Author(s):  
Gong‐Ru Lin ◽  
Wen‐Chung Chen ◽  
C.‐S. Chang ◽  
Ci‐Ling Pan
Keyword(s):  
Electrical Characterization ◽  
Voltage Measurement ◽  
Current Voltage ◽  
Ion Implanted

Direct Electrical Characterization of Metal Induced Lateral Crystallization Regions by Spreading Resistance Probe Measurements

2003 ◽  
Vol 762 ◽  
Author(s):  
Alexandre M. Myasnikov ◽  
Vincent M.C. Poon ◽  
Vincent T.C. Leung ◽  
Mansun Chan ◽  
Lawrence C.F. Cheng
Keyword(s):  
Material Characterization ◽  
Carrier Mobility ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Single Crystalline Silicon ◽  
Spreading Resistance ◽  
Lateral Crystallization ◽  
Probe Measurements ◽  
Ion Implanted

AbstractMaterial characterization of metal induced lateral crystallization (MILC) process of amorphous silicon (a-Si) has been performed by using the spreading resistance probe (SRP) measurements. It was found that carrier mobility in boron ion implanted layer, formed in MILC region, is up to 65 % in comparison with mobility in boron ion implanted layer, formed in single crystalline silicon. It was also observed in this work that prolongation of MILC process from 1 hour to 2 hours had induced the increasing of mobility from 24 cm2/Vs to 34 cm2/Vs.

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