Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide

2000 ◽  
Vol 77 (10) ◽  
pp. 1478-1480 ◽  
Author(s):  
S.-K. Lee ◽  
C.-M. Zetterling ◽  
E. Danielsson ◽  
M. Östling ◽  
J.-P. Palmquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Aluminum Ion ◽  
Ion Implanted

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted

Structural and electrical characterization of ohmic contacts to graphitized silicon carbide

2009 ◽  
Vol 20 (49) ◽  
pp. 495703 ◽  
Author(s):  
Mohammad H Maneshian ◽  
Ming-Te Lin ◽  
David Diercks ◽  
Nigel D Shepherd
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Electrical Characterization

Fabrication and electrical characterization of polyaniline/silicon carbide heterojunctions

2011 ◽  
Vol 44 (20) ◽  
pp. 205101 ◽  
Author(s):  
J F Felix ◽  
E A de Vasconcelos ◽  
E F da Silva ◽  
W M de Azevedo
Keyword(s):  
Silicon Carbide ◽  
Electrical Characterization

scholarly journals A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

2005 ◽  
Vol 483-485 ◽  
pp. 1005-1008
Author(s):  
Pierre Brosselard ◽  
Thierry Bouchet ◽  
Dominique Planson ◽  
Sigo Scharnholz ◽  
Gontran Pâques ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Electrical Characterization ◽  
Electrical Strength ◽  
Oxide Charge ◽  
Blocking Voltage ◽  
Simulation Based ◽  
Device Structures ◽  
Silicon Silicon

Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.

Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes

2003 ◽  
Vol 433-436 ◽  
pp. 621-624
Author(s):  
Antonella Poggi ◽  
Roberta Nipoti ◽  
G.C. Cardinali ◽  
Francesco Moscatelli
Keyword(s):  
Electrical Characterization ◽  
Ion Implanted

Structural and electrical characterization of n+-type ion-implanted 6H-SiC

2004 ◽  
Vol 27 (1-3) ◽  
pp. 239-242 ◽  
Author(s):  
D. Goghero ◽  
F. Giannazzo ◽  
V. Raineri ◽  
P. Musumeci ◽  
L. Calcagno
Keyword(s):  
Electrical Characterization ◽  
Ion Implanted
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