The GaAs heterojunction bipolar transistor: an electron device with optical device reliability

1996 ◽  
Vol 36 (11-12) ◽  
pp. 1879-1886 ◽  
Author(s):  
T.S. Henderson
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Electron Device ◽  
Optical Device ◽  
Device Reliability

Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance

2009 ◽  
Vol 1 (6) ◽  
pp. 475-482 ◽  
Author(s):  
Ali Alaeddine ◽  
Moncef Kadi ◽  
Kaouther Daoud ◽  
Hichame Maanane ◽  
Philippe Eudeline
Keyword(s):  
Electromagnetic Field ◽  
Near Field ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Scattering Parameters ◽  
Hot Carrier ◽  
Base Current ◽  
Stress Effects ◽  
Device Reliability ◽  
Strip Lines

This paper deals with the various aspects of electromagnetic field impact modeling on the SiGe heterojunction bipolar transistor (HBT) device for microwave applications. This study differs from conventional HBT device reliability research associated with other stresses. The originality of this study comes from the generation of a localized electromagnetic field using the near-field bench. A coupling phenomenon between the electromagnetic field and the micro-strip lines connecting the transistor are evaluated by electromagnetic and electrical simulations. After stress, the input and the transmission scattering parameters are affected. This is primarily due to the deviation of the input impedance and the reduction of the transconductance, respectively. The stress effects have been related to a base current degradation. This degradation is due to a hot carrier introducing generation/recombination trap centers at the Si/SiO2 interface of the emitter–base spacer oxide, which leads to an excess recombination base current.

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
J. G. METCALFE ◽  
R. C. HAYES ◽  
A. J. HOLDEN ◽  
A. P. LONG
Keyword(s):  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC

1990 ◽  
Vol 26 (2) ◽  
pp. 122 ◽  
Author(s):  
J. Akagi ◽  
Y. Kuriyama ◽  
K. Morizuka ◽  
M. Asaka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Decision Circuit

InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

2002 ◽  
Vol 38 (6) ◽  
pp. 289 ◽  
Author(s):  
B.P. Yan ◽  
C.C. Hsu ◽  
X.Q. Wang ◽  
E.S. Yang
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction

scholarly journals Ballistic two-dimensional lateral heterojunction bipolar transistor

2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Leonardo Lucchesi ◽  
Gaetano Calogero ◽  
Gianluca Fiori ◽  
Giuseppe Iannaccone
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Two Dimensional
Sign in / Sign up

Export Citation Format

Share Document