Binding of an exciton to a neutral acceptor

1976 ◽  
Vol 18 (11-12) ◽  
pp. 1557-1560 ◽  
Author(s):  
D.S. Pan ◽  
D.L. Smith ◽  
T.C. McGill
Keyword(s):  
Neutral Acceptor

scholarly journals PL Study on the Effect of Cu on the Front Side Luminescence of CdTe/CdS Solar Cells

Coatings ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 435 ◽  
Author(s):  
Halina Opyrchal ◽  
Dongguo Chen ◽  
Zimeng Cheng ◽  
Ken Chin
Keyword(s):  
Heat Treatment ◽  
Energy Gap ◽  
Cdte Layer ◽  
Large Shift ◽  
Additional Band ◽  
Junction Area ◽  
Solid Film ◽  
Cdcl2 Treatment ◽  
Neutral Acceptor ◽  
Low Temperature Photoluminescence

The effect of Cu on highly efficient CdTe thin solid film cells with a glass/TCO/CdS/CdTe structure subjected to CdCl2 treatment was investigated by low-temperature photoluminescence (PL). The PL of the CdS/CdTe junction in samples without Cu deposition revealed a large shift in the bound exciton position due to the formation of CdSxTe1−x alloys with Eg (alloy) ≅ 1.557 eV at the interface region. After Cu deposition on the CdTe layer and subsequent heat treatment, a neutral acceptor-bound exciton (A0Cu,X) line at 1.59 eV and two additional band-edge peaks at 1.54 and 1.56 eV were observed, indicating an increase in the energy gap value in the vicinity of the CdTe/CdS interface to that characteristic of bulk CdTe. These results may suggest the disappearance of the intermixing phase at the CdTe/CdS interface due to the presence of Cu atoms in the junction area and the interaction of the Cu with sulfur atoms. Furthermore, an increase in the intensity of CdS-related peaks in Cu-doped samples was observed, implying that Cu atoms were incorporated into CdS after heat treatment.

Raman and hot electron-neutral acceptor luminescence studies of electron-optical phonon interactions in GaAs/A1xGa1-xAs quantum wells

2000 ◽  
Author(s):  
ChihMing Wang ◽  
HorngYu Chang ◽  
Kien Wen Sun ◽  
ShyangYeu Wang ◽  
Chien-Ping Lee
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Hot Electron ◽  
Neutral Acceptor

Bound Exciton–Neutral Acceptor Complex in ZnTe

1976 ◽  
Vol 75 (1) ◽  
pp. 341-346 ◽  
Author(s):  
W. Wardzyński ◽  
K. Pataj
Keyword(s):  
Acceptor Complex ◽  
Neutral Acceptor

Interactions of LO Phonons with Bound Excitons in Homoepitaxial GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
K. P. Koron ◽  
A. Wysmolek ◽  
J. M. Baranowskil ◽  
K. Pakul ◽  
J. P. Bergman ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
The Other ◽  
Direct Influence ◽  
Neutral Donor ◽  
Phonon Replica ◽  
Temperature Range ◽  
Other Hand ◽  
Order Of Magnitude ◽  
Neutral Acceptor

AbstractPhotoluminescence connected with excitons and their phonon replicas in undoped homoepitaxial MOCVD grown GaN layers have been studied in the temperature range 2 - 100 K. It is shown that the coupling between LO phonons and neutral acceptor bound excitons (ABE) is much stronger than the coupling between LO phonons and neutral donor bound excitons (DBE). In spite that emission due the DBE no-phonon is one order of magnitude stronger than the ABE one, the predominant feature of the first LO phonon replica of the excitonic structures is related to the ABE. It is argued that this fact is connected with delocalization of the acceptor wavefunction in the k-space which leads to a higher number of interacting LO phonons in the first replica. On the other hand, the second LO phonon replica of the excitonic structures is predominantly connected with the DBE. In the case of two LO phonons interacting with bound excitons the k - conservation has not so direct influence. In addition, the temperature dependence of LO phonon replicas and their kinetics in ps regime are also reported.

Investigation of the Electron Statistics of the Neutral Acceptor Level of Gold in Germanium

1970 ◽  
Vol 41 (9) ◽  
pp. 3840-3843 ◽  
Author(s):  
K. L. Ashley ◽  
W. E. Ham ◽  
R. T. Brown
Keyword(s):  
Acceptor Level ◽  
Neutral Acceptor

The Properties of Dual Acceptor Delta-Doped ZnO Thin Films

2015 ◽  
Vol 1805 ◽  
Author(s):  
T N. Oder ◽  
R.C. Gade ◽  
C. Merlo
Keyword(s):  
Thin Films ◽  
Hole Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Hall Effect Measurements ◽  
Ceramic Targets ◽  
Post Deposition ◽  
Neutral Acceptor

ABSTRACTWe report the investigation of ZnO thin films delta-doped with lithium and phosphorus introduced simultaneously. The films were deposited from high purity ceramic targets of ZnO and Li3PO4 on c-plane sapphire substrates by RF magnetron sputtering. An undoped ZnO film with a low background electron concentration was used as the buffer layer on the sapphire substrate. The doped films were prepared by carrying simultaneous sputtering from the ZnO and Li3PO4 ceramic targets. For uniform doped films, the simultaneous deposition from the ZnO and Li3PO4 was uninterrupted. For the delta-doped films on the other hand, deposition from the ZnO target was uninterrupted while that from the Li3PO4 was interrupted periodically using a shutter. Post-deposition annealing was carried using a rapid thermal processor in O2 at 900 oC for 3 min. Results obtained from photoluminescence spectroscopy measurements at 12 K revealed acceptor-related luminescence peaks at 3.35 eV, possibly due to the transition from exciton bound to a neutral acceptor. The x-ray diffraction 2θ-scans showed a single peak at about 34.4o. Hall effect measurements revealed p-type conductivities with an average Hall concentrations of 3.8 x 1013 cm-3 in uniform doped samples and 1.5 x 1016 cm-3 in delta doped samples. However, in some cases the Hall coefficients had both positive and negative values, making the determination of the carrier type inconclusive. The fluctuation in the carrier type could be due to the lateral inhomogeneity in the hole concentration caused by signal noise impacting the small Hall voltages in the measurements.

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