Interactions of LO Phonons with Bound Excitons in Homoepitaxial GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
K. P. Koron ◽  
A. Wysmolek ◽  
J. M. Baranowskil ◽  
K. Pakul ◽  
J. P. Bergman ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
The Other ◽  
Direct Influence ◽  
Neutral Donor ◽  
Phonon Replica ◽  
Temperature Range ◽  
Other Hand ◽  
Order Of Magnitude ◽  
Neutral Acceptor

AbstractPhotoluminescence connected with excitons and their phonon replicas in undoped homoepitaxial MOCVD grown GaN layers have been studied in the temperature range 2 - 100 K. It is shown that the coupling between LO phonons and neutral acceptor bound excitons (ABE) is much stronger than the coupling between LO phonons and neutral donor bound excitons (DBE). In spite that emission due the DBE no-phonon is one order of magnitude stronger than the ABE one, the predominant feature of the first LO phonon replica of the excitonic structures is related to the ABE. It is argued that this fact is connected with delocalization of the acceptor wavefunction in the k-space which leads to a higher number of interacting LO phonons in the first replica. On the other hand, the second LO phonon replica of the excitonic structures is predominantly connected with the DBE. In the case of two LO phonons interacting with bound excitons the k - conservation has not so direct influence. In addition, the temperature dependence of LO phonon replicas and their kinetics in ps regime are also reported.

Comparison of the Potency of 8-L-Arginine, 8-D-Arginine and 8-D-Homoarginine Vasopressin Analogs with Substituted Phenylalanine in Position 2

1994 ◽  
Vol 59 (6) ◽  
pp. 1439-1450 ◽  
Author(s):  
Miroslava Žertová ◽  
Jiřina Slaninová ◽  
Zdenko Procházka
Keyword(s):  
Amino Acid ◽  
Solid Phase Synthesis ◽  
Solid Phase ◽  
Basic Amino Acid ◽  
The Other ◽  
Side Chain ◽  
Inhibitory Potency ◽  
Phase Synthesis ◽  
Other Hand ◽  
Order Of Magnitude

An analysis of the uterotonic potencies of all analogs having substituted L- or D-tyrosine or -phenylalanine in position 2 and L-arginine, D-arginine or D-homoarginine in position 8 was made. The series of analogs already published was completed by the solid phase synthesis of ten new analogs having L- or D-Phe, L- or D-Phe(2-Et), L- or D-Phe(2,4,6-triMe) or D-Tyr(Me) in position 2 and either L- or D-arginine in position 8. All newly synthesized analogs were found to be uterotonic inhibitors. Deamination increases both the agonistic and antagonistic potency. In the case of phenylalanine analogs the change of configuration from L to D in position 2 enhances the uterotonic inhibition for more than 1 order of magnitude. The L to D change in position 8 enhances the inhibitory potency negligibly. Prolongation of the side chain of the D-basic amino acid in position 8 seems to decrease slightly the inhibitory potency if there is L-substituted amino acid in position 2. On the other hand there is a tendency to the increase of the inhibitory potency if there is D-substituted amino acid in position 2.

scholarly journals SYNTHESIS AND ELECTRICAL CONDUCTIVITY OF SOLID SOLUTIONS OF THE SYSTEM RbF-PbF2-SnF2

2019 ◽  
Vol 85 (5) ◽  
pp. 60-68
Author(s):  
Yuliay Pogorenko ◽  
Anatoliy Omel’chuk ◽  
Roman Pshenichny ◽  
Anton Nagornyi
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Temperature Dependence ◽  
Solid Solutions ◽  
Basic Structure ◽  
Elementary Cell ◽  
Initial Structure ◽  
Fluoride Ions ◽  
Temperature Range ◽  
Order Of Magnitude

In the system RbF–PbF2–SnF2 are formed solid solutions of the heterovalent substitution RbxPb0,86‑xSn1,14F4-x (0 < x ≤ 0,2) with structure of β–PbSnF4. At x > 0,2 on the X-ray diffractograms, in addition to the basic structure, additional peaks are recorded that do not correspond to the reflexes of the individual fluorides and can indicate the formation of a mixture of solid solutions of different composition. For single-phase solid solutions, the calculated parameters of the crystal lattice are satisfactorily described by the Vegard rule. The introduction of ions of Rb+ into the initial structure leads to an increase in the parameter a of the elementary cell from 5.967 for x = 0 to 5.970 for x = 0.20. The replacement of a part of leads ions to rubium ions an increase in electrical conductivity compared with β–PbSnF4 and Pb0.86Sn1.14F4. Insignificant substitution (up to 3.0 mol%) of ions Pb2+ at Rb+ at T<500 K per order of magnitude reduces the conductivity of the samples obtained, while the nature of its temperature dependence is similar to the temperature dependence of the conductivity of the sample β-PbSnF4. By replacing 5 mol. % of ions with Pb2+ on Rb+, the fluoride ion conductivity at T> 450 K is higher than the conductivity of the initial sample Pb0,86Sn1,14F4 and at temperatures below 450 K by an order of magnitude smaller. With further increase in the content of RbF the electrical conductivity of the samples increases throughout the temperature range, reaching the maximum values at x≥0.15 (σ573 = 0.34–0.41 S/cm, Ea = 0.16 eV and σ373 = (5.34–8.16)•10-2 S/cm, Ea = 0.48–0.51 eV, respectively). In the general case, the replacement of a part of the ions of Pb2+ with Rb+ to an increase in the electrical conductivity of the samples throughout the temperature range. The activation energy of conductivity with an increase in the content of RbF in the low-temperature region in the general case increases, and at temperatures above 400 K is inversely proportional decreasing. The nature of the dependence of the activation energy on the concentration of the heterovalent substituent and its value indicate that the conductivity of the samples obtained increases with an increase in the vacancies of fluoride ions in the structure of the solid solutions.

Temperature dependence of cross sections for 72P1/2 ↔ 72P3/2 excitation transfer and for quenching in cesium, induced in collisions with H2, N2, CH4, and CD4

1982 ◽  
Vol 60 (2) ◽  
pp. 239-244 ◽  
Author(s):  
I. N. Siara ◽  
R. U. Dubois ◽  
L. Krause
Keyword(s):  
Energy Transfer ◽  
Temperature Dependence ◽  
Cross Sections ◽  
Rotational Energy ◽  
Excitation Transfer ◽  
Sensitized Fluorescence ◽  
Temperature Range ◽  
Rotational Energy Transfer ◽  
Order Of Magnitude

The temperature dependence of cross sections for 72P1/2 ↔ 72P3/2 excitation transfer in cesium, as well as the effective quenching of these states, induced in collisions with H2, N2, CH4, and CD4 molecules have been investigated in a series of sensitized fluorescence experiments over a temperature range 390–640 K. The 72P mixing cross sections are of the order of 10−15 cm2 and exceed by at least one order of magnitude similar cross sections for mixing by collisions with Ne, Ar, Kr, and Xe. The large sizes of the mixing cross sections and their variation with temperature are ascribed to a phenomenon of electronic-to-rotational energy transfer.

Plastic Deformations in L10-Ordered Single Crystals with their c/a Ratios Less than Unity

2007 ◽  
Vol 561-565 ◽  
pp. 459-462
Author(s):  
Katsushi Tanaka ◽  
Hiromitsu Ide ◽  
Yoshinori Sumi ◽  
Kyosuke Kishida ◽  
Haruyuki Inui
Keyword(s):  
Shear Stress ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
The Other ◽  
Compressive Deformation ◽  
Positive Temperature ◽  
Plastic Deformations ◽  
Temperature Range ◽  
Critical Resolved Shear Stress

Compressive deformation of L10-ordered single crystals of FePd whose c/a ratio less than unity have been investigated from room temperature to 823 K. The results show that the critical resolved shear stress (CRSS) for octahedral glide of ordinary dislocations is smaller than that of super-lattice dislocations in all the temperature range investigated, that is the opposite sense to the case of Ti-56 mol% Al. The CRSS for ordinary dislocations virtually independent to the temperature. On the other hand, the CRSS for super dislocations exhibits a weak positive temperature dependence from room temperature up to 573 K and decreases in higher temperatures.

Reduction of binary sulfate mixtures containing CuSO4 by H2

1976 ◽  
Vol 54 (23) ◽  
pp. 3651-3657 ◽  
Author(s):  
Fathi Habashi ◽  
Shaheer A. Mikhail
Keyword(s):  
Intermediate Product ◽  
The Other ◽  
Temperature Range ◽  
Other Hand ◽  
First Case ◽  
Limited Temperature ◽  
Limited Temperature Range ◽  
The Individual

The reduction of a binary sulfate mixture cannot be predicted from the behavior of the individual components. Thus, while CuSO4 is reduced to Cu at 400 °C and NiSO4 is reduced to Ni3S2, the sulfate mixture yields Cu, Ni3S2, and Cu2S. Also while FeSO4 is completely stable in H2 at 400 °C, (Cu,Fe) SO4 yields Cu and Cu5FeS4. The formation of Cu2S in the first case and Cu5FeS4 in the second was unexpected. On the other hand, (Cu,Mn)SO4 is stable in H2 up to 550 °C although pure CuSO4 is completely reduced at 400 °C. CoSO4 also interferes when reduced in presence of CuSO4, while Na2SO4, MgSO4, Al2(SO4)3, ZnSO4, CdSO4 do not interfere within limited temperature range. Of these only Na2SO4 forms a complex sulfate with CuSO4. No Cu2SO4 was identified when CuSO4 was reduced in presence of other sulfates although it is an intermediate product during the reduction of pure CuSO4.

FERROMAGNETIC TDAE-C60 VERSUS PARAMAGNETIC TDAE-C70: FARADEY BALANCE AND ESR STUDY

1992 ◽  
Vol 06 (23n24) ◽  
pp. 3953-3958 ◽  
Author(s):  
Kazuyoshi Tanaka ◽  
Anvar A. Zakhidov ◽  
Kazunari Yoshizawa ◽  
Kenji Okahara ◽  
Tokio Yamabe ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Fullerene Molecule ◽  
The Other ◽  
Temperature Range ◽  
Type Transition ◽  
Other Hand ◽  
Spin Resonance ◽  
Ordered State

Magnetic properties of C 60 and C 70 complexes with tetrakis(dimethylamino)ethylene (TDAE) have been studied based on the measurements of the Faraday-balance magnetization and the electron spin resonance (ESR). It has been found that both TDAE- C 60 and TDAE- C 70 possess about one radical spin per fullerene molecule. TDAE- C 60 has been confirmed to show ferromagnetic-type transition at Tc=16.7–17.5 K . Appearance of a new broad and intense ESR signal below Tc of TDAE- C 60 suggests that the radical spins in the magnetically ordered state rather localize on each C 60 molecule and are ferromagnetically correlated. On the other hand, TDAE- C 70 does not show ferromagnetism in all the temperature range down to 4.5K.

Carboxy Nitroso Rubber, Chemistry, Properties, and Applications

1971 ◽  
Vol 44 (1) ◽  
pp. 40-51 ◽  
Author(s):  
N. B. Levine
Keyword(s):  
The Other ◽  
Temperature Range ◽  
Other Hand

Abstract The nitroso copolymer shows excellent promise which has not been realized due to a lack of ability to achieve a suitable cure. The CNR terpolymer, on the other hand, retains the excellent solvent and oxidizer resistance, nonflammability, and wide useful temperature range of the copolymer and can, in addition, be easily fabricated and cured by several techniques into many useful products.

scholarly journals Effect of temperature on growth of Pseudomonas protegens Pf-5 and Pseudomonas aeruginosa PRD-10 in LB Lennox medium

2018 ◽  
Author(s):  
Wenfa Ng
Keyword(s):  
Pseudomonas Aeruginosa ◽  
Optical Density ◽  
The Other ◽  
Temperature Adaptation ◽  
Effect Of Temperature ◽  
Metabolic Processes ◽  
Two Phase ◽  
Ph Variation ◽  
Temperature Range ◽  
Other Hand

Temperature affects growth of bacteria by influencing enzyme and growth kinetics. Specifically, evolution selects for specific temperature range in which a microbe could thrive, and thus fix the temperature range in which biomolecule structure and function are finely tuned for coping with the thermal conditions prevailing within a cell at a particular temperature. Using aerobic culture in LB Lennox medium in shake flasks, this study aimed to understand the growth of Pseudomonas protegens Pf-5 (ATCC BAA-477) and Pseudomonas aeruginosa PRD-10 (ATCC 15442) at 25, 30 and 37 oC. Experiment results revealed that P. protegens Pf-5 grew very poorly at 37 oC (with maximal optical density of 0.66), while better growth was observed at 25 and 30 oC. Specifically, P. protegens Pf-5 appeared to be better adapted to growth at 25 oC, where the maximal optical density obtained was 5.3 compared to 4.6 at 30 oC. More importantly, two phase growth behaviour was observed during growth at 30 oC where a faster initial phase of growth was followed by a slower one. Growth at 25 and 30 oC exhibited similar pH trend, which suggested similar metabolic processes was activated during growth. On the other hand, P. aeruginosa PRD-10 demonstrated a more efficient conversion of LB Lennox medium into biomass where the maximal optical density obtained at all three growth temperatures were higher than those of P. protegens Pf-5. More importantly, growth of P. aeruginosa PRD-10 exhibited a clear adaptation to growth at 25 and 37 oC, while growth at 30 oC resulted in a lower biomass yield compared to that of 25 and 37 oC. On the other hand, pH variation during culture revealed that P. aeruginosa PRD-10 likely activated similar metabolic processes at all three growth temperatures, where a higher growth temperature would result in the net secretion of more alkaline metabolites. Collectively, P. protegens Pf-5 and P. aeruginosa PRD-10 demonstrated clear temperature adaptation at an evolutionary level. In addition, experiment data suggested that P. aeruginosa PRD-10 might have co-evolved with humans on a substantial time scale resulting in a temperature preference of 37 oC over 30 oC.

Differential Enthalpies of Solution of Components in Binary Systems 2 CaO . Al2O3 . SiO2-CaO . Al2O3 . 2 SiO2, CaO . SiO2-CaO . Al2O3 . 2 SiO2 and CaO . SiO2-2 CaO . Al2O3 . SiO2

1993 ◽  
Vol 58 (9) ◽  
pp. 1989-1996 ◽  
Author(s):  
Ladislav Kosa ◽  
Ivan Nerád ◽  
Jozef Strečko ◽  
Ivo Proks ◽  
Katarína Adamkovičová
Keyword(s):  
Binary Systems ◽  
The Other ◽  
Enthalpies Of Solution ◽  
Heat Of Solution ◽  
Differential Heat ◽  
Temperature Range ◽  
Enthalpies Of Mixing ◽  
Other Hand ◽  
Temperature Dependences

Differential enthalpies of solution of components in binary systems 2 CaO . Al2O3 . SiO2-CaO . Al2O3 . 2 SiO2, CaO . SiO2-CaO . Al2O3 . 2 SiO2 and CaO . SiO2-2 CaO . Al2O3 . SiO2 as the function of composition and temperature were determined on the base of isothermal composition dependences of enthalpies of mixing and temperature dependences of heats of fusion of their pure components. From the values of the first differential heat of solution of CaO . Al2O3 . 2 SiO2 and 2 CaO . Al2O3 . SiO2 in CaO . SiO2 over temperature range considered we can conclude that the reactions were closed chains of SiO4 tetrahedra in CaO . SiO2 melt break, are exothermic. On the other hand positive values of this quantity for CaO . SiO2 in CaO . Al2O3 . 2 SiO2 and 2 CaO . Al2O3 . SiO2 led us to the conclusion that the progressive breaking originally closed chains in CaO . SiO2 melt has endothermic character.

Effects of alloying elements on thermoelectric properties of ReSi1.75

2003 ◽  
Vol 793 ◽  
Author(s):  
Min Wook Oh ◽  
Jia-Jun Gu ◽  
Kosuke Kuwabara ◽  
Haruyuki Inui
Keyword(s):  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Thermoelectric Property ◽  
Thermoelectric Properties ◽  
Binary Alloy ◽  
Figure Of Merit ◽  
The Other ◽  
Alloying Elements ◽  
Dimensionless Figure Of Merit ◽  
Other Hand

ABSTRACTS:The thermoelectric properties as well as microstructure of binary and some ternary ReSi1.75 have been investigated. Binary ReSi1.75 exhibits a nice thermoelectric property as exemplified by the high value of dimensionless figure of merit (ZT) of 0.70 at 800 °C when measured along [001], although the ZT value along [100] is just moderately high. Mo substitution for Re in ReSi1.75 considerably increases the ZT value along [001] because of the decreased electrical resistivity, while the property improvement is not significant along [100]. On the other hand, Al and Ge substitutions for Si in ReSi1.75 considerably increase the ZT value along [100]. This is also because of the decreased electrical resistivity. When Al is added to ReSi1.75, the value of electrical resistivity is significantly reduced when compared to the binary counterpart and the temperature dependence of electrical resistivity changes from of semiconductor for the binary alloy to of metal for the Al-added alloys.

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