Semi-insulating Gallium Arsenide ( SI-GaAs ) samples experimentally show, under high electric fields and even at room temperature, negative differential conductivity in N-shaped form (NNDC). Since the most consolidated model for n-GaAs , namely, "the model", proposed by E. Schöll was not capable to generate the NNDC curve for SI-GaAs , in this work we have proposed an alternative model. The model proposed, "the two-valley model" is based on the minimal set of generation-recombination equations for two valleys inside of the conduction band, and an equation for the drift velocity as a function of the applied electric field, that covers the physical properties of the nonlinear electrical conduction of the SI-GaAs system. The "two-valley model" was capable to generate theoretically the NNDC region for the first time, and with that, we were able to build a high resolution parameter-space of the periodicity (PSP) using a Periodicity-Detection (PD) routine. In the parameter-space were observed self-organized periodic structures immersed in chaotic regions. The complex regions are presented in a "shrimp" shape rotated around a focal point, which forms in large-scale a "snail shell" shape, with intricate connections between different "shrimps". The knowledge of detailed information on parameter spaces is crucial to localize wide regions of smooth and continuous chaos.
High-resolution X-ray studies of microstructural changes associated with conduction at high electric fields in semiconductors and insulators
