Optical gain spectra due to a one-dimensional electron-hole plasma in quantum-wire lasers

2005 ◽  
Author(s):  
Yuhei Hayamizu
Keyword(s):  
Quantum Wire ◽  
Optical Gain ◽  
Dimensional Electron ◽  
Electron Hole ◽  
One Dimensional ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Gain Spectra

Optical gain spectra of high density electron-hole plasma in GaSe and InSe

1988 ◽  
Vol 37 (4) ◽  
pp. 583-586 ◽  
Author(s):  
R Cingolani ◽  
M Ferrara ◽  
M Lugarà
Keyword(s):  
Optical Gain ◽  
High Density ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Gain Spectra

Quantum confined one-dimensional electron-hole plasma in semiconductor quantum wires

1991 ◽  
Vol 67 (7) ◽  
pp. 891-894 ◽  
Author(s):  
R. Cingolani ◽  
H. Lage ◽  
L. Tapfer ◽  
H. Kalt ◽  
D. Heitmann ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Dimensional Electron ◽  
Electron Hole ◽  
One Dimensional ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Quantum Confined

scholarly journals Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN

1997 ◽  
Vol 2 ◽  
Author(s):  
J.-Chr. Holst ◽  
L. Eckey ◽  
A. Hoffmann ◽  
I. Broser ◽  
H. Amano ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Blue Laser ◽  
Basic Material ◽  
Organic Chemical ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Wide Range ◽  
Gain Spectra ◽  
Excitation Processes

High-excitation processes like biexciton decay and recombination of an electron-hole-plasma are discussed as efficient mechanisms for lasing in blue laser diodes [1]. Therefore, the investigation of these processes is of fundamental importance to the understanding of the properties of GaN as a basic material for optoelectronical applications. We report on comprehensive photoluminescence and gain measurements of highly excited GaN epilayers grown by metal-organic chemical vapor deposition (MOCVD) over a wide range of excitation densities and temperatures. For low temperatures the decay of biexcitons and the electron-hole-plasma dominate the spontaneous-emission and gain spectra. A spectral analysis of the lineshape of these emissions is performed and the properties of the biexciton and the electron-hole-plasma in GaN will be disscused in comparison to other wide-gap materials. At increased temperatures up to 300 K exciton-exciton-scattering and band-to-band recombination are the most efficient processes in the gain spectra beside the electron-hole-plasma.

scholarly journals Mott transition from a diluted exciton gas to a dense electron-hole plasma in a single V-shaped quantum wire

2003 ◽  
Vol 67 (23) ◽  
Author(s):  
T. Guillet ◽  
R. Grousson ◽  
V. Voliotis,† ◽  
M. Menant ◽  
X.L. Wang‡ ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Mott Transition ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma
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