The temperature dependence of the electrical resistivity of gold films

1984 ◽  
Vol 52 (4) ◽  
pp. 367-370 ◽  
Author(s):  
J.R Sambles ◽  
K.C Elsom
1999 ◽  
Vol 581 ◽  
Author(s):  
J. Ederth ◽  
L. B. Kiss ◽  
G. A. Niklasson ◽  
C. G. Granqvist ◽  
E. Olsson

ABSTRACTNanocrystalline thin Au films with grain size 10 - 76 nm have been analyzed regarding the temperature dependence of the electrical resistivity. A sudden change in the power function, ρ α Tn, was found at ∼10 K, where n = 1.7 in the range 5 - 10 K and n = 3.3 in the range 10 - 15 K. This effect disappears after annealing at 773 K for 0.5 h in air at atmospheric pressure. After the annealing the grain size was ∼ 100 nm. This is an indication of interference between electron-phonon scattering and electron-grain boundary scattering in nanocrystalline materials at low temperatures.The temperature coefficient of resistivity, TCR, increased with increasing grain size at any temperature and the position of the maximum TCR was shifted towards lower temperatures with increasing grain size.


2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.


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