Spin orientation by optical pumping in InxGa1−xAs/AlAs multiple quantum wells

Abstract In this study, we demonstrated large-area high quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emission wavelengths of 460 and 520 nm from the regrown InxGa1−xN/GaN multiple quantum wells were observed under optical pumping conditions. To confirm the strongly coupling between the quantum well emissions and the photonic crystal band-edge resonant modes, the finite-element method (FEM) was applied to perform a simulation of the 12-fold symmetry photonic quasicrystal lattices.

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Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells

Applied Physics Letters ◽

10.1063/1.1326488 ◽

2000 ◽

Vol 77 (20) ◽

pp. 3146-3148 ◽

Cited By ~ 49

Author(s):

S. D. Ganichev ◽

H. Ketterl ◽

W. Prettl ◽

E. L. Ivchenko ◽

L. E. Vorobjev

Keyword(s):

Quantum Wells ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Spin Orientation ◽

Photogalvanic Effect

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GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1100] oriented GaN substrates

MRS Proceedings ◽

10.1557/proc-743-l4.2 ◽

2002 ◽

Vol 743 ◽

Author(s):

C. Q. Chen ◽

M. E. Gaevski ◽

W. H. Sun ◽

E. Kuokstis ◽

J. W. Yang ◽

...

Keyword(s):

Surface Morphology ◽

Quantum Wells ◽

Optical Pumping ◽

Chemical Vapor ◽

Growth Conditions ◽

Stimulated Emission ◽

Multiple Quantum Wells ◽

Molar Ratio ◽

Band Edge Emission ◽

Multiple Quantum

AbstractWe report on the homoepitaxial growth of GaN on freestanding [1100] oriented GaN substrates using metalorganic chemical vapor deposition. A proper pretreatment of the substrates was found to be essential for the GaN homoepitaxy. The influence of growth conditions such as V/III molar-ratio and temperature on the surface morphology and optical properties of epilayers was investigated. Optimized pretreatment and growth conditions led to high quality [1100] oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Based on these GaN epilayer, AlGaN/GaN multiple quantum wells have been grown on the freestanding M-plane GaN. Photoluminescence data confirm that built-in electric field for M-plane structures is very weak, and this situation results in a stronger PL intensity in comparison with C-plane multiple quantum wells in tests at low excitation level.

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Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar InxGa1−xN/GaN Multiple Quantum Wells

Nanoscale Research Letters ◽

10.1186/s11671-021-03576-1 ◽

2021 ◽

Vol 16 (1) ◽

Author(s):

Cheng-Chang Chen ◽

Hsiang-Ting Lin ◽

Shih-Pang Chang ◽

Hao-Chung Kuo ◽

Hsiao-Wen Hung ◽

...

Keyword(s):

Quantum Wells ◽

Nanoimprint Lithography ◽

Optical Pumping ◽

High Efficiency ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Large Area ◽

Resonant Modes ◽

Color Emission ◽

Photonic Quasicrystal

AbstractIn this study, we demonstrated large-area high-quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emission wavelengths of 460 and 520 nm from the regrown InxGa1−xN/GaN multiple quantum wells were observed under optical pumping conditions. To confirm the strong coupling between the quantum well emissions and the photonic crystal band-edge resonant modes, the finite-element method was applied to perform a simulation of the 12-fold symmetry photonic quasicrystal lattices.

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