On the validity of the gradual channel approximation for junction field effect transistors with drift velocity saturation

1973 ◽  
Vol 16 (9) ◽  
pp. 1047-1053 ◽  
Author(s):  
Kurt Lehovec ◽  
W.G. Seeley
Keyword(s):  
Drift Velocity ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Approximation ◽  
Velocity Saturation ◽  
Junction Field Effect Transistors

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

2020 ◽  
Vol 67 (10) ◽  
pp. 3972-3977 ◽  
Author(s):  
Chen Yang ◽  
Houqiang Fu ◽  
Viswanathan Naveen Kumar ◽  
Kai Fu ◽  
Hanxiao Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Vertical Channel ◽  
Junction Field Effect Transistors

Low Noise Junction Field Effect Transistors in a Silicon Radiation Detector Technology

2006 ◽  
Vol 53 (5) ◽  
pp. 3004-3012 ◽  
Author(s):  
G.-F. Dalla Betta ◽  
M. Boscardin ◽  
F. Fenotti ◽  
L. Pancheri ◽  
C. Piemonte ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Radiation Detector ◽  
Low Noise ◽  
Detector Technology ◽  
Junction Field Effect Transistors
Sign in / Sign up

Export Citation Format

Share Document