Analytical model of the modulation doped field‐effect transistors including electron diffusion and drift velocity saturation

1987 ◽  
Vol 62 (4) ◽  
pp. 1537-1538 ◽  
Author(s):  
A. A. Grinberg
2020 ◽  
Vol 2 (9) ◽  
pp. 4179-4186 ◽  
Author(s):  
Pedro C. Feijoo ◽  
Francisco Pasadas ◽  
Marlene Bonmann ◽  
Muhammad Asad ◽  
Xinxin Yang ◽  
...  

A drift–diffusion model including self-heating effects in graphene transistors to investigate carrier velocity saturation for optimal high frequency performance.


NANO ◽  
2008 ◽  
Vol 03 (03) ◽  
pp. 195-201 ◽  
Author(s):  
JOSE M. MARULANDA ◽  
ASHOK SRIVASTAVA ◽  
ASHWANI K. SHARMA

We present analytical model equations for threshold voltage (Vth) and saturation voltage (Vds,sat) characterizing CNT-FETs. These model equations have been obtained from the charge and potential distributions between the gate and substrate in a CNT-FET. It is shown that both Vth and Vds,sat are strongly dependent on chiral vectors of CNTs. The results show close agreement between theoretical and graphical modeling techniques. It is also shown that the calculated Vth of a CNT-FET with chiral vector (3, 1) is in close agreement with the corresponding published work.


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