Measurements on depletion-mode field effect transistors and buried channel MOS capacitors for the characterization of bulk transfer charge-coupled devices

1975 ◽  
Vol 18 (5) ◽  
pp. 407-416 ◽  
Author(s):  
A.M. Mohsen ◽  
F.J. Morris
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Mos Capacitors ◽  
Buried Channel ◽  
Mode Field ◽  
Charge Coupled Devices

scholarly journals Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors

2020 ◽  
Vol 2 (4) ◽  
pp. 1465-1472
Author(s):  
Marolop Dapot Krisman Simanullang ◽  
G. Bimananda M. Wisna ◽  
Koichi Usami ◽  
Shunri Oda
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Shell Thickness ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Conductance Quantization ◽  
Mode Field ◽  
Multi Mode ◽  
Shell Nanowires

Demonstration of high-performance p-channel depletion mode field-effect transistors and conductance quantization of multi-mode ballistic Ge-core/a-Si shell nanowires.

Fabrication and Characterization of GaN-based Nanostructure Field Effect Transistors

2021 ◽  
pp. 108079
Author(s):  
Dong-Hyeok Son ◽  
Terirama Thingujam ◽  
Quan Dai ◽  
Jeong-Gil Kim ◽  
Sorin Cristoloveanu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication And Characterization
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