Transverse diffusion coefficient and carrier density fluctuation derived from the fluctuation of the state occupancy function in semiconductors

1989 ◽  
Vol 32 (12) ◽  
pp. 1901-1904 ◽  
Author(s):  
J.P. Nougier ◽  
J.C. Vaissiere
2004 ◽  
Vol 43 (8A) ◽  
pp. 5568-5572 ◽  
Author(s):  
Shingo Kobayashi ◽  
Nobuyuki Hasebe ◽  
Tsutomu Igarashi ◽  
Takashi Miyachi ◽  
Mitsuhiro Miyajima ◽  
...  

1997 ◽  
Vol 71 (11) ◽  
pp. 1501-1503 ◽  
Author(s):  
D. Streb ◽  
G. Klem ◽  
W. Fix ◽  
P. Kiesel ◽  
G. H. Döhler

1973 ◽  
Vol 51 (5) ◽  
pp. 564-573 ◽  
Author(s):  
Richard L. Monroe

The theoretical problem of a weakly ionized, constant temperature, three particle plasma in an externally generated magnetic field is reformulated by transforming the set of 14 macroscopic plasma equations (continuity and momentum equations for ions and electrons plus Maxwell's equations) in 14 unknowns (ion and electron number densities and velocities plus the effective electric and magnetic fields) into an equivalent set of 4 integral equations in 4 unknowns. In the course of this transformation, it is shown that the plasma behavior can be interpreted in terms of three ambipolar processes : drift, deformation, and diffusion. Plasma diffusion is characterized by two diffusion coefficients : the usual Schottky formula applying in the direction parallel to the effective magnetic field and a new expression for the ambipolar transverse diffusion coefficient applying in directions perpendicular to the effective magnetic field. The new ambipolar coefficient differs markedly from the familiar ambipolar coefficient associated with the names of Bickerton, Lehnert, Holway, Allis, and Buchsbaum; and, in general, it gives values for the transverse diffusion coefficient which are two orders of magnitude larger than those given by the latter. It is concluded that ambipolar diffusion can produce a transverse diffusion coefficient large enough to account for the diffusion rates measured by Bohm, Burhop, Massey, and Williams in argon arc discharges.


1967 ◽  
Vol 15 (4) ◽  
pp. 689-692 ◽  
Author(s):  
H.H. Brömer ◽  
F. Spieweck

2005 ◽  
Vol 483-485 ◽  
pp. 413-416 ◽  
Author(s):  
K. Neimontas ◽  
R. Aleksiejūnas ◽  
M. Sūdžius ◽  
Kęstutis Jarašiūnas ◽  
Peder Bergman

We applied picosecond four-wave mixing technique to investigate carrier diffusion and recombination in n-type 4H-SiC epilayers. The dependence of bipolar diffusion coefficient D on photocarrier density was measured in range from ~ 1017 to ~ 1020 cm-3. We determined a decrease of D value from 3.4 to 2.2 cm2/s with increase of the photoexcitation level in range from ~ 1017 to ~ 1019 cm-3, and found its increase up to 3.8 cm2/s at carrier density above 1020 cm-3. Auger recombination governed decrease of carrier lifetime from 11 ns at ~ 1017 cm-3 to 1.8 ns at ~ 1020 cm- 3 has also been observed.


2000 ◽  
Vol 610 ◽  
Author(s):  
Bogdan S. Sokolovskii ◽  
Liubomyr S. Monastyrskii ◽  
Roman M. Kovtun

AbstractAn expression for concentration dependence of diffusion coefficient of ionized impurity in semiconductors which is derived which is valid for the whole range of carrier degeneracy under the condition that the impurity concentration greatly exceeds the intrinsic carrier density. Due to reduction of impurity field screening by mobile carriers at degenerate conditions the diffusion coefficient is shown to be a monotonously increasing function of impurity concentration. It is proved that taking band gap narrowing into account results in a reduction of the diffusion coefficient in comparison with the case of unperturbed band structure. In addition, a decreasing concentration dependence of the diffusion coefficient can be realized at relatively low impurity concentrations.


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