According to different assumptions in deriving carrier and energy flux equations, macroscopic semiconductor
transport models from the moments of the Boltzmann transport equation (BTE) can be divided into two main
categories: the hydrodynamic (HD) model which basically follows Bløtekjer's approach [1, 2], and the Energy
Transport (ET) model which originates from Strattton's approximation [3, 4]. The formulation, discretization,
parametrization and numerical properties of the HD and ET models are carefully examined and compared. The
well-known spurious velocity spike of the HD model in simple nin structures can then be understood from its
formulation and parametrization of the thermoelectric current components. Recent progress in treating negative
differential resistances with the ET model and extending the model to thermoelectric simulation is summarized.
Finally, we propose a new model denoted by DUET (Dual ET)which accounts for all thermoelectric effects in
most modern devices and demonstrates very good numerical properties. The new advances in applicability and
computational efficiency of the ET model, as well as its easy implementation by modifying the conventional
drift-diffusion (DD) model, indicate its attractiveness for numerical simulation of advanced semiconductor
devices
Analysis of numerical schemes for semiconductor energy-transport models
