The composition and temperature dependences of the fundamental band gap in ZnSxSe1−x alloys

1979 ◽  
Vol 86 ◽  
pp. 378-383 ◽  
Author(s):  
L. Soonckindt ◽  
D. Etienne ◽  
J.P. Marchand ◽  
L. Lassabatere
Keyword(s):  
Band Gap ◽  
Fundamental Band ◽  
Temperature Dependences

Magneto-optical properties of theGaxIn1−xSesystem near the fundamental band gap

1984 ◽  
Vol 30 (4) ◽  
pp. 1957-1961 ◽  
Author(s):  
G. Saintonge ◽  
J. L. Brebner
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Fundamental Band

scholarly journals Conductivity and Density of States of New Polyphenylquinoline

Polymers ◽  
2019 ◽  
Vol 11 (6) ◽  
pp. 934 ◽  
Author(s):  
Shamil R. Saitov ◽  
Dmitriy V. Amasev ◽  
Alexey R. Tameev ◽  
Vladimir V. Malov ◽  
Marine G. Tedoradze ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Band Gap ◽  
Density Of States ◽  
Optical Band Gap ◽  
Dark Conductivity ◽  
Localized States ◽  
Energy Distance ◽  
Temperature Dependences

Electrical, photoelectrical, and optical properties of thin films of a new heat-resistant polyphenylquinoline synthesized using facile methods were investigated. An analysis of the obtained temperature dependences of the dark conductivity and photoconductivity indicates the hopping mechanism of conductivity over localized states arranging at the energy distance of 0.8 eV from the Fermi level located inside the band gap of the investigated material. The optical band gap of the studied material was estimated from an analysis of the spectral dependences of the photoconductivity and absorption coefficient before (1.8–1.9 eV) and after (2.0–2.2 eV) annealing at temperatures exceeding 100 °C. The Gaussian character of the distribution of the localized states of density inside the band gap near the edges of the bands was established. A mechanism of changes in the optical band gap of the investigating polymer under its annealing is proposed.

Electronic Structure of Heavily and Randomly Nitrogen Doped GaAs near the Fundamental Band Gap

2001 ◽  
Vol 228 (1) ◽  
pp. 287-291 ◽  
Author(s):  
Yong Zhang ◽  
S. Francoeur ◽  
A. Mascarenhas ◽  
H.P. Xin ◽  
C.W. Tu
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Fundamental Band ◽  
Nitrogen Doped

Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO

2007 ◽  
Author(s):  
R. Schmidt-Grund ◽  
N. Ashkenov ◽  
M. M. Schubert ◽  
W. Czakai ◽  
D. Faltermeier ◽  
...  
Keyword(s):  
Refractive Index ◽  
Temperature Dependence ◽  
Band Gap ◽  
Optical Transitions ◽  
Fundamental Band

scholarly journals Temperature dependence of the fundamental band gap of InN

2003 ◽  
Vol 94 (7) ◽  
pp. 4457-4460 ◽  
Author(s):  
J. Wu ◽  
W. Walukiewicz ◽  
W. Shan ◽  
K. M. Yu ◽  
J. W. Ager ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Fundamental Band

Temperature Dependence Of The Fundamental Band Gap In Hexagonal GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Herr ◽  
V. Alex ◽  
J. Weber
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Line Shape ◽  
Free Exciton ◽  
Band Gap Energy ◽  
Recombination Process ◽  
Photoluminescence Spectra ◽  
High Quality ◽  
Fundamental Band ◽  
Gap Energy

AbstractPhotoluminescence spectra of hexagonal GaN were measured in the temperature range T= 2 – 1200 K. We identify the Free Exciton (FX) as the dominant recombination process in our high quality samples for temperatures above 200 K. From the line shape fit of the FX we determine the excitonic band gap shift with temperature. An analysis according to the empirical Varshni equation gives Eg (T)-Eg(0 K) = (-α T2)/(T + β), with α = (7.3 ± 0.3)·10−4 eV/K and β = (594 ± 54) K. We have detected significant differences in the band gap energy at low and higher temperatures for GaN layers grown on different substrate materials. Heating GaN above 1200 K leads to irreversible changes in the near band gap photoluminescence spectra.

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