Moderate phonon dispersion shown by the temperature dependence of fundamental band gaps of various elemental and binary semiconductors including wide-band gap materials

First-principles computations were performed to investigate the uniform bending effect on the electronic properties of armchair boron nitride nanoribbons (aBNNRs) with experimentally obtained width. For both bare and hydrogen-terminated aBNNRs, the band gaps only slightly depend on the uniform bending. The insensitivity of the band structures of BNNRs to the uniform bending makes them ideal materials when their wide band gap character is desired.

Download Full-text

Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding

Journal of Materials Chemistry C ◽

10.1039/d0tc02371j ◽

2020 ◽

Vol 8 (28) ◽

pp. 9755-9762 ◽

Cited By ~ 1

Author(s):

Itsuki Miyazato ◽

Tanveer Hussain ◽

Keisuke Takahashi

Keyword(s):

Boron Nitride ◽

Band Gap ◽

First Principles ◽

Wide Band ◽

Band Gaps ◽

Single Atom ◽

First Principles Calculations ◽

Optoelectronic Materials ◽

Wide Band Gap

The band gaps in boron nitride/phosphorene (h-BN/P) heterostructures are investigated by single-atom-embedding via first principles calculations. The modified heterostructures are potential optoelectronic materials with tunable band gaps.

Download Full-text

Wide band gap design of new chalcogenide compounds: KSrPS4 and CsBaAsS4

RSC Advances ◽

10.1039/c7ra01142c ◽

2017 ◽

Vol 7 (60) ◽

pp. 38044-38051 ◽

Cited By ~ 10

Author(s):

Jianqiao Jiang ◽

Dajiang Mei ◽

Pifu Gong ◽

Zheshuai Lin ◽

Junbo Zhong ◽

...

Keyword(s):

Band Gap ◽

Diffuse Reflectance ◽

Wide Band ◽

Band Gaps ◽

Wide Band Gap ◽

Reflectance Measurements

KSrPS4 and CsBaAsS4 were successfully synthesized. The results of diffuse reflectance measurements revealed that KSrPS4 and CsBaAsS4 possess wide band gaps, which are larger than 3.62 eV and 2.86 eV, respectively.

Download Full-text

Efficient wide band gap double cation – double halide perovskite solar cells

Journal of Materials Chemistry A ◽

10.1039/c6ta10727c ◽

2017 ◽

Vol 5 (7) ◽

pp. 3203-3207 ◽

Cited By ~ 15

Author(s):

Dávid Forgács ◽

Daniel Pérez-del-Rey ◽

Jorge Ávila ◽

Cristina Momblona ◽

Lidón Gil-Escrig ◽

...

Keyword(s):

Solar Cells ◽

Band Gap ◽

Perovskite Solar Cells ◽

Wide Band ◽

Band Gaps ◽

Wide Band Gap ◽

Halide Perovskite

We study the properties of the series of compounds Cs0.15FA0.85Pb(BrxI1−x)3, aiming to develop an efficient complementary absorber for MAPbI3 in all-perovskite tandems. A bromide content of 0.7 leads to a band gap of 2 eV and a maximum PCE of 11.5% in solar cells, among the highest reported for band gaps wider than 1.8 eV.

Download Full-text

Doping Effects in Wide Band Gap Semiconductor Nanoparticles: Lattice Variations, Size Changes, Widening Band Gaps but no Structural Transformations!

Nanomaterials ◽

10.1201/b21267-3 ◽

2018 ◽

pp. 37-65

Author(s):

P. M. G. Nambissan

Keyword(s):

Band Gap ◽

Wide Band ◽

Semiconductor Nanoparticles ◽

Structural Transformations ◽

Band Gaps ◽

Wide Band Gap ◽

Doping Effects

Download Full-text

TEM and cathodoluminescence of precipitates in II-VI semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104509 ◽

1988 ◽

Vol 46 ◽

pp. 488-489

Author(s):

Joanna L. Batstone

Keyword(s):

Crystal Growth ◽

Band Gap ◽

Local Strain ◽

Wide Band ◽

Optoelectronic Device ◽

Wide Band Gap ◽

Bulk Crystal Growth ◽

Transmission Electron ◽

Device Applications ◽

Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Download Full-text