The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)

1979 ◽  
Vol 86 ◽  
pp. 763-788 ◽  
Author(s):  
W.E. Spicer ◽  
P.W. Chye ◽  
C.M. Garner ◽  
I. Lindau ◽  
P. Pianetta
Keyword(s):  
Electronic Structure ◽  
Fermi Level ◽  
Schottky Barriers ◽  
Fermi Level Pinning ◽  
Surface Electronic Structure

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Mechanisms of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb

1993 ◽  
Vol 36 (10) ◽  
pp. 1371-1373 ◽  
Author(s):  
A.Y. Polyakov ◽  
A.G. Milnes ◽  
N.B. Smirnov ◽  
L.V. Druzhinina ◽  
I.V. Tunitskaya
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Fermi Level Pinning

scholarly journals Electronic structure of pyridine-based SAMs on flat Au(111) surfaces: extended charge rearrangements and Fermi level pinning

2011 ◽  
Vol 13 (20) ◽  
pp. 9747 ◽  
Author(s):  
ZhongYun Ma ◽  
Ferdinand Rissner ◽  
LinJun Wang ◽  
Georg Heimel ◽  
QiKai Li ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Fermi Level ◽  
Fermi Level Pinning ◽  
Extended Charge

Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

2007 ◽  
Vol 101 (11) ◽  
pp. 114514 ◽  
Author(s):  
D. J. Ewing ◽  
L. M. Porter ◽  
Q. Wahab ◽  
X. Ma ◽  
T. S. Sudharshan ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Defect States ◽  
Fermi Level Pinning

Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP

1994 ◽  
Vol 340 ◽  
Author(s):  
V.A. Gorbyley ◽  
A.A. Chelniy ◽  
A.A. Chekalin ◽  
A.Y. Polyakov ◽  
S.J. Pearon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Fermi Level ◽  
Plasma Treatment ◽  
Schottky Barrier ◽  
Hydrogen Plasma ◽  
Schottky Diodes ◽  
Schottky Barriers ◽  
Quantum Well Structures ◽  
Fermi Level Pinning ◽  
Barrier Heights

ABSTRACTIt is shown that in Au/InGaP and Au/InGaAlP Schottky diodes the Fermi level is pinned by metal-deposition-induced midgap states. Hydrogen plasma treatment of such diodes greatly improves the reverse currents. The measured Schottky barrier heights seem to correlate with the valence band offsets measured by DLTS on quantum well structures.

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