Electronic Properties of Semiconductors: Fermi Level Pinning in Schottky Barriers and Band Line-up in Semiconductors

1987 ◽  
pp. 182-195
Author(s):  
F. Flores
Keyword(s):  
Fermi Level ◽  
Electronic Properties ◽  
Schottky Barriers ◽  
Fermi Level Pinning

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Mechanisms of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb

1993 ◽  
Vol 36 (10) ◽  
pp. 1371-1373 ◽  
Author(s):  
A.Y. Polyakov ◽  
A.G. Milnes ◽  
N.B. Smirnov ◽  
L.V. Druzhinina ◽  
I.V. Tunitskaya
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Fermi Level Pinning

Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

2007 ◽  
Vol 101 (11) ◽  
pp. 114514 ◽  
Author(s):  
D. J. Ewing ◽  
L. M. Porter ◽  
Q. Wahab ◽  
X. Ma ◽  
T. S. Sudharshan ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Defect States ◽  
Fermi Level Pinning

Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP

1994 ◽  
Vol 340 ◽  
Author(s):  
V.A. Gorbyley ◽  
A.A. Chelniy ◽  
A.A. Chekalin ◽  
A.Y. Polyakov ◽  
S.J. Pearon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Fermi Level ◽  
Plasma Treatment ◽  
Schottky Barrier ◽  
Hydrogen Plasma ◽  
Schottky Diodes ◽  
Schottky Barriers ◽  
Quantum Well Structures ◽  
Fermi Level Pinning ◽  
Barrier Heights

ABSTRACTIt is shown that in Au/InGaP and Au/InGaAlP Schottky diodes the Fermi level is pinned by metal-deposition-induced midgap states. Hydrogen plasma treatment of such diodes greatly improves the reverse currents. The measured Schottky barrier heights seem to correlate with the valence band offsets measured by DLTS on quantum well structures.

Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect

2018 ◽  
Vol 20 (33) ◽  
pp. 21732-21738 ◽  
Author(s):  
Nanshu Liu ◽  
Si Zhou ◽  
Nan Gao ◽  
Jijun Zhao
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Great Promise ◽  
Gallium Selenide ◽  
Two Dimensional ◽  
Fermi Level Pinning ◽  
Pinning Effect

Monolayer gallium selenide (GaSe), an emerging two-dimensional semiconductor, holds great promise for electronics and optoelectronics.

FERMI LEVEL PINNING AT A SCHOTTKY BARRIER: Na ON GaAs(110) FROM THE LOW TO THE HIGH COVERAGE REGIME

1994 ◽  
Vol 01 (04) ◽  
pp. 429-433 ◽  
Author(s):  
MARTINA HEINEMANN
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Schottky Barriers ◽  
High Coverage ◽  
Large Group ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces ◽  
First Time

The large group of rectifying metal-semiconductor interfaces is better known under the name Schottky barriers or contacts. Their rectifying behavior has been reported for the first time by Braun in 1874 but the understanding of the actual physics at such interfaces is still not complete. This paper summarizes the development of models and shows how modern calculational methods can contribute to a better understanding of Schottky barriers.

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