scholarly journals Origin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Barriers

2020 ◽  
Vol 124 (36) ◽  
pp. 19698-19703
Author(s):  
Zhaofu Zhang ◽  
Yuzheng Guo ◽  
John Robertson
Keyword(s):  
Fermi Level ◽  
Interface States ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Mechanisms of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb

1993 ◽  
Vol 36 (10) ◽  
pp. 1371-1373 ◽  
Author(s):  
A.Y. Polyakov ◽  
A.G. Milnes ◽  
N.B. Smirnov ◽  
L.V. Druzhinina ◽  
I.V. Tunitskaya
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Fermi Level Pinning

Increase in Schottky Barrier Height in the CoSi2/Si (100) Interface Caused by Hydrogen

1992 ◽  
Vol 281 ◽  
Author(s):  
A. D. Marwick ◽  
M. O. Aboelfotoh ◽  
R. Casparis
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interface States ◽  
Hydrogen Atoms ◽  
Fermi Level Pinning ◽  
Gap States

ABSTRACTIt is shown that the presence of 8 × 1015 hydrogen atoms/cm2 in the CoSi2/Si (100) interface causes an increase in the Schottky barrier height of 120 meV, and that passivation of dopants in the substrate is not the cause of this change. The data is evidence that the position of the Fermi level in this interface is controlled by defect-related interface states. After hydrogenation the Schottky barrier height agrees with that predicted by theory for Fermi level pinning by virtual gap states of the silicon.

Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

2007 ◽  
Vol 101 (11) ◽  
pp. 114514 ◽  
Author(s):  
D. J. Ewing ◽  
L. M. Porter ◽  
Q. Wahab ◽  
X. Ma ◽  
T. S. Sudharshan ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Defect States ◽  
Fermi Level Pinning

Use of temperature to study the nature of interface states and Fermi level pinning with metals on GaAs(110)

1989 ◽  
Vol 181 (1-2) ◽  
pp. 43-55 ◽  
Author(s):  
Renyu Cao ◽  
K Miyano ◽  
I Lindau ◽  
W.E Spicer
Keyword(s):  
Fermi Level ◽  
Interface States ◽  
Fermi Level Pinning

Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP

1994 ◽  
Vol 340 ◽  
Author(s):  
V.A. Gorbyley ◽  
A.A. Chelniy ◽  
A.A. Chekalin ◽  
A.Y. Polyakov ◽  
S.J. Pearon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Fermi Level ◽  
Plasma Treatment ◽  
Schottky Barrier ◽  
Hydrogen Plasma ◽  
Schottky Diodes ◽  
Schottky Barriers ◽  
Quantum Well Structures ◽  
Fermi Level Pinning ◽  
Barrier Heights

ABSTRACTIt is shown that in Au/InGaP and Au/InGaAlP Schottky diodes the Fermi level is pinned by metal-deposition-induced midgap states. Hydrogen plasma treatment of such diodes greatly improves the reverse currents. The measured Schottky barrier heights seem to correlate with the valence band offsets measured by DLTS on quantum well structures.

Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect

2018 ◽  
Vol 20 (33) ◽  
pp. 21732-21738 ◽  
Author(s):  
Nanshu Liu ◽  
Si Zhou ◽  
Nan Gao ◽  
Jijun Zhao
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Great Promise ◽  
Gallium Selenide ◽  
Two Dimensional ◽  
Fermi Level Pinning ◽  
Pinning Effect

Monolayer gallium selenide (GaSe), an emerging two-dimensional semiconductor, holds great promise for electronics and optoelectronics.

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