Molecular emission characteristics of various fluorides in a low-temperature-hydrogen diffusion flame

Talanta ◽  
1971 ◽  
Vol 18 (2) ◽  
pp. 155-164 ◽  
Author(s):  
R.M. Dagnall ◽  
B. Fleet ◽  
T.H. Risby ◽  
D.R. deans
1975 ◽  
Vol 11 (1-2) ◽  
pp. 29-33 ◽  
Author(s):  
T. A. BRZUSTOWSKI ◽  
S. R. GOLLAHALLI ◽  
H. F. SULLIVAN

1995 ◽  
Vol 378 ◽  
Author(s):  
Xiaojun Deng ◽  
Bhushan L. Sopori

AbstractThe diffusivity of deuterium (D) at 250°C was determined in silicon samples grown by different techniques. It is found that the diffusivity increases with the growth speed, increase in carbon content and a decrease in oxygen concentration of the substrate. These growth conditions correlate well with the concentration of vacancy-type defects in the as-grown state. Hence, we conclude that a vacancy mechanism is responsible for low-temperature hydrogen diffusion in silicon. The highest diffusivity for hydrogen, calculated from these data, was found to be 3 × 10−7 cm2/s.


Vacuum ◽  
2008 ◽  
Vol 82 (5) ◽  
pp. 551-555 ◽  
Author(s):  
Woo Yong Sung ◽  
Wal Jun Kim ◽  
Ho Young Lee ◽  
Yong Hyup Kim

1964 ◽  
Vol 40 (7) ◽  
pp. 2054-2055 ◽  
Author(s):  
E. M. Nemeth ◽  
J. C. Polanyi ◽  
C. M. Sadowski

1998 ◽  
Vol 509 ◽  
Author(s):  
A.N. Titkov ◽  
A.I. Kosarev ◽  
A.J. Vinogradov ◽  
Z. Waqar ◽  
I.V. Makarenko ◽  
...  

AbstractThe effect of deposition parameters and substrate on the morphology of carbon films prepared in VHF plasma at low temperature has been studied by Atomic Force Microscopy. Carbon films demonstrating superior emission characteristics were the smoothest, but not all of the smoothest films demonstrated good emission. Significant influence of pre-growth treatment of the substrate surface on the emission characteristics of the films was found.


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