Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Growth Process ◽  
High Energy ◽  
Ex Situ ◽  
Chemical Beam Epitaxy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

Epitaxial growth of Cr [001] on LiF [001]

1989 ◽  
Vol 160 ◽  
Author(s):  
J. Mattson ◽  
M. B. Brodsky ◽  
J. Ketterson ◽  
H. You
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Epitaxial Growth ◽  
High Energy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Temperatures ◽  
Deposition Conditions

AbstractWe report X-ray diffraction and in-situ RHEED( Reflection High Energy Electron Diffraction) measurements on Cr thin films deposited on LiF[001] single crystal substrates for thicknesses up to 300 nm and for substrate temperatures from 30 to 450°C. From these measurements we determine the range of deposition conditions necessary for epitaxial growth and the stress in these films as a function of film thickness.

Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy

MRS Advances ◽  
2017 ◽  
Vol 2 (3) ◽  
pp. 189-194
Author(s):  
Franck Natali ◽  
Joe Trodahl ◽  
Stéphane Vézian ◽  
Antoine Traverson ◽  
Benjamin Damilano ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
Doped Semiconductors ◽  
X Ray ◽  
Resistivity Measurements

ABSTRACTGdN/SmN based superlattices have been grown by molecular beam epitaxy. In-situ reflection high energy electron diffraction was used to evaluate the evolution of the epitaxial growth and the structural properties were assessed by ex-situ X-ray diffraction. Hall Effect and resistivity measurements as a function of the temperature establish that the superlattices are heavily n-type doped semiconductors and the electrical conduction resides in both REN layers, SmN and GdN.

PHASE FORMATION AND TEXTURE DEVELOPMENT IN AG-SHEATHED Bi, Pb(2223) TAPES STUDIED BY DIFFERENT IN-SITU AND EX-SITU DIFFRACTION TECHNIQUES

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2688-2693 ◽  
Author(s):  
E. GIANNINI ◽  
E. BELLINGERI ◽  
F. MARTI ◽  
M. DHALLÉ ◽  
V. HONKIMÄKI ◽  
...  
Keyword(s):  
High Energy ◽  
Texture Development ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scattering Geometry ◽  
Reflection Geometry ◽  
Comparison Of The Results ◽  
In Situ Neutron Diffraction

In-situ and ex-situ high energy (80÷88 keV) X-Ray diffraction from a synchrotron radiation source were performed on multifilamentary Bi, Pb(2223)/Ag tapes using a transmission scattering geometry. Several thermo-mechanical procedures were compared, focusing mainly on the texture development of both Bi, Pb(2212) and Bi, Pb(2223) phases. The effect of the periodic pressing on the texture and on the critical current is elucidated. The texture development of the Bi, Pb(2212) phase prior to its transformation into Bi, Pb(2223) was directly observed in-situ at high temperature by using a dedicated high-energy X-ray compatible furnace and a high resolution Image Plate detector. A sharp increase of the Bi, Pb(2212) grain orientation along the [00l] direction was found to occur only above 750°C. Normal state transport measurements are in full agreement with the formation mechanism and with the texture development observed. A comparison of the results with the ones provided by in-situ neutron diffraction and standard low-energy XRD in a reflection geometry is presented.

scholarly journals Development of a High Resolution X-ray Spectroscope Combined with Reflection High Energy Electron Diffraction.

Shinku ◽  
2001 ◽  
Vol 44 (3) ◽  
pp. 135-138
Author(s):  
Takafumi SATO ◽  
Makoto KAWAMURA ◽  
Kuniaki ORIKASA ◽  
Nobuaki MINAMI ◽  
Koyu OTA ◽  
...  
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
X Ray

High energy electron diffraction and X-ray diffraction studies on magnetic materials of the type Y2Fe17Cx (0 ⩽ x ⩽ 1.6)

1990 ◽  
Vol 157 (2) ◽  
pp. 255-270 ◽  
Author(s):  
W Coene ◽  
F Hakkens ◽  
T.H Jacobs ◽  
D.B de Mooij ◽  
K.H.J Buschow
Keyword(s):  
Electron Diffraction ◽  
Magnetic Materials ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

Heteroepitaxial growth of C60 on tetracene single crystal

2013 ◽  
Vol 1501 ◽  
Author(s):  
Tetsuhiko Miyadera ◽  
Hiroki Mitsuta ◽  
Noboru Ohashi ◽  
Tetsuya Taima ◽  
Ying Zhou ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Direct Evidence ◽  
High Energy ◽  
High Energy Electron ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Symmetric Pattern ◽  
Initial Stage

ABSTRACTWe have developed a method for epitaxial growth of C60 thin films on tetracene single crystals. The crystal orientation of the C60 film was examined by reflection high energy electron diffraction (RHEED) and X-ray diffraction (XRD). In-situ observation by RHEED revealed that the C60 crystallizes from the very initial stage of the deposition (0.1 nm). A 6-fold symmetric pattern, which was observed in a XRD polar scan, can be taken as direct evidence for the epitaxial growth of C60 commensurate with the tetracene (001) surface lattice.

Electrical Properties of InN Grown by RF-MBE

2000 ◽  
Vol 639 ◽  
Author(s):  
Yoshiki Saito ◽  
Nobuaki Teraguchi ◽  
Akira Suzuki ◽  
Tomohiro Yamaguchi ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electron Diffraction ◽  
Carrier Density ◽  
Room Temperature ◽  
High Energy ◽  
Rf Plasma ◽  
Plasma Power ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTInN films with excellent surface morphology were grown by controlled the V/III ratio of InN epitaxal layer. It was found they were single crystal of InN films with wurtzite structure by X-ray diffraction (XRD) measurement and reflection high-energy electron diffraction (RHEED) observation. Hall mobility as high as 760 cm2/Vs was achieved for InN film grown at 550°C with 240 W of RF plasma power with a carrier density of 3.0×1019 cm−3 at room temperature. To our knowledge, this electron mobility is the highest value ever reported.

scholarly journals In Situ Scanning X-Ray Diffraction Reveals Strain Variations in Electrochemically Grown Nanowires

2020 ◽  
Author(s):  
Alfred Larsson ◽  
Giuseppe abbondanza ◽  
lisa rämisch ◽  
weronica linpe ◽  
Dmitri Novikov ◽  
...  
Keyword(s):  
Tensile Strain ◽  
Growth Process ◽  
Spatial Information ◽  
Atomic Scale ◽  
Ex Situ ◽  
Magnetic Storage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nanoporous Templates

<p><a>Templated electrochemical growth in nanoporous alumina can be used to fabricate nanowires with applications in magnetic storage devices, hydrogen sensors, and electrocatalysis. It is known that nanowires, grown in such templates, are strained. The strain in nanoscale materials can influence their performance in applications such as catalysts and electronic devices. However, it is not well established how the nanoporous template affects the lattice strain in the nanowires and how this develops during the growth process due to the lack of non-destructive <i>in situ </i>studies with spatial resolution. Here we have measured the strain and grain size of palladium nanowires in nanoporous templates during the growth process. For this we performed <i>in situ</i> scanning x-ray diffraction with a submicron focused x-ray beam. We found that there is a tensile strain in the nanowires and that it is more pronounced along the growth direction than in the confined direction of the templates. The tensile strain measured <i>in situ</i> is higher than previous <i>ex situ </i>reports, possibly due to hydrogen absorption during the growth. With the spatial information made possible with the focused synchrotron x-ray beam we could observe local variations in strain as a function of height. A region of local strain variation is found near the bottom of the nanowires where growth is initiated in branches at the pore bottoms. Knowledge of how nanoporous templates influence the strain of the nanowires may allow for atomic scale tailoring of the catalytic activity of such nanowires or minimizing strain to optimize electronic device performance. </a></p>

Structural properties of Eu doped GaN and its relation with luminescence properties

2004 ◽  
Vol 831 ◽  
Author(s):  
Hyungjin Bang ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka ◽  
Katsuhiro Akimoto
Keyword(s):  
Structural Properties ◽  
High Energy ◽  
Concentration Quenching ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Close Relationship ◽  
The Eu

ABSTRACTThe Structural properties of Europium (Eu) doped GaN and its relation with optical properties were studied. Concentration quenching of the intensity of the Eu related luminescence observed when Eu concentration exceeds 3 at.%. In situ reflection high-energy electron diffraction (RHEED), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were carried out to study this luminescence quenching and it was discovered that there is close relationship between the luminescence intensity at 622 nm and structural properties. The cause of the concentration quenching is likely related to the polycrystalline growth as well as to the EuN formation.

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