Molecular beam epitaxy for high electron mobility modulation-doped two-dimensional electron gases

Thin Solid Films ◽

10.1016/0040-6090(93)90704-s ◽

1993 ◽

Vol 231 (1-2) ◽

pp. 74-85 ◽

Author(s):

Michael R. Melloch

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

High Electron Mobility

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Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.4824729 ◽

2013 ◽

Vol 103 (16) ◽

pp. 162105 ◽

Author(s):

Jiun-Yun Li ◽

Chiao-Ti Huang ◽

Leonid P. Rokhinson ◽

James C. Sturm

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

High Electron Mobility

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Transport properties of closely separated two‐dimensional electron gases in a channel‐doped back gated high electron mobility transistor

Applied Physics Letters ◽

10.1063/1.106715 ◽

1992 ◽

Vol 60 (26) ◽

pp. 3268-3270 ◽

Author(s):

A. Kurobe ◽

J. E. F. Frost ◽

D. A. Ritchie ◽

G. A. C. Jones ◽

M. Pepper

Keyword(s):

Transport Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

High Electron Mobility

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Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers

physica status solidi (a) ◽

10.1002/pssa.201100379 ◽

2012 ◽

Vol 209 (3) ◽

pp. 501-504 ◽

Author(s):

Shin Hashimoto ◽

Katsushi Akita ◽

Yoshiyuki Yamamoto ◽

Masaki Ueno ◽

Takao Nakamura ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

High Electron Mobility ◽

Barrier Layers ◽

Electron Mobility Transistors

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Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1807023 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4043-4045 ◽

Author(s):

T. Kitada ◽

T. Aoki ◽

I. Watanabe ◽

S. Shimomura ◽

S. Hiyamizu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

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High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.125418 ◽

1999 ◽

Vol 75 (23) ◽

pp. 3653-3655 ◽

Author(s):

M. J. Murphy ◽

K. Chu ◽

H. Wu ◽

W. Yeo ◽

W. J. Schaff ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1481751 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1200 ◽

Author(s):

O. Baklenov ◽

D. Lubyshev ◽

Y. Wu ◽

X.-M. Fang ◽

J. M. Fastenau ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Large Diameter ◽

High Electron Mobility Transistor ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

High Electron ◽

High Electron Mobility

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High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.01.035 ◽

2004 ◽

Vol 265 (1-2) ◽

pp. 34-40 ◽

Author(s):

Kazuhiro Miyamoto ◽

Michihiro Sano ◽

Hiroyuki Kato ◽

Takafumi Yao

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility

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Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.2919163 ◽

2008 ◽

Vol 103 (9) ◽

pp. 093529 ◽

Author(s):

A. L. Corrion ◽

C. Poblenz ◽

F. Wu ◽

J. S. Speck

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

Morphological Properties ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Fabrication of strained and double heterojunction In/sub x/Ga/sub 1-x/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by solid-source molecular beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.841249 ◽

2000 ◽

Vol 47 (5) ◽

pp. 1115-1117 ◽

Author(s):

S.F. Yoon ◽

B.P. Gay ◽

H.Q. Zheng ◽

H.T. Kam ◽

J. Degenhardt

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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