Growth kinetics of antimony layers prepared on SiOx by molecular beam deposition

1995 ◽  
Vol 259 (1) ◽  
pp. 32-37
Author(s):  
Hisashi Nakai ◽  
Daisuke Baba ◽  
Akio Kosuge ◽  
Mituru Hashimoto
Keyword(s):  
Growth Kinetics ◽  
Molecular Beam ◽  
Molecular Beam Deposition ◽  
Kinetics Of ◽  
Beam Deposition

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

2004 ◽  
Vol 84 (18) ◽  
pp. 3684-3686 ◽  
Author(s):  
E. Monroy ◽  
E. Sarigiannidou ◽  
F. Fossard ◽  
N. Gogneau ◽  
E. Bellet-Amalric ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of

Molecular beam deposition of high quality silicon oxide dielectric films

1995 ◽  
Vol 148 (4) ◽  
pp. 336-344 ◽  
Author(s):  
Naresh Chand ◽  
J.E. Johnson ◽  
J.W. Osenbach ◽  
W.C. Liang ◽  
L.C. Feldman ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Silicon Oxide ◽  
Dielectric Films ◽  
High Quality ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Growth Kinetics of Molecular Beam Epitaxy on Non-Singular Surfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
J. F. Egler ◽  
N. Otsuka ◽  
K. Mahalingam
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Singular Surface ◽  
Sticking Coefficient ◽  
Singular Surfaces ◽  
Vicinal Surfaces ◽  
Kinetics Of ◽  
Multiple Configurations

ABSTRACTGrowth kinetics on non-singular surfaces were studied by Monte Carlo simulations. In contrast to the growth on singular and vicinal surfaces, the sticking coefficient on the non-singular surfaces was found to decrease with increase of the surface roughness. Simulations of annealing processes showed that surface diffusion of atoms leads to a stationary surface roughness, which is explained by multiple configurations having the lowest energy in the non-singular surface.

Ozone-enhanced molecular beam deposition of nickel oxide (NiO) for sensor applications

1997 ◽  
Vol 310 (1-2) ◽  
pp. 19-23 ◽  
Author(s):  
Alexandra Neubecker ◽  
Thomas Pompl ◽  
Theodor Doll ◽  
Walter Hansch ◽  
Ignaz Eisele
Keyword(s):  
Nickel Oxide ◽  
Molecular Beam ◽  
Sensor Applications ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Heteroepitaxial properties of Si1−x−yGexCy on Si(100) grown by combined ion- and molecular-beam deposition

1997 ◽  
Vol 81 (7) ◽  
pp. 3081-3091 ◽  
Author(s):  
Harald Jacobsson ◽  
Joan Xiang ◽  
Nicole Herbots ◽  
Shawn Whaley ◽  
Peihua Ye ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Deposition ◽  
Beam Deposition

scholarly journals Controlling the Early Stages of Pentacene Growth by Supersonic Molecular Beam Deposition

2007 ◽  
Vol 98 (7) ◽  
Author(s):  
Yu Wu ◽  
Tullio Toccoli ◽  
Norbert Koch ◽  
Erica Iacob ◽  
Alessia Pallaoro ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Supersonic Molecular Beam ◽  
Early Stages ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Structural and Optical Properties of In-Plane Ordered Metallo-Phthalocyanine Thin Films Formed on Sapphire by Organic Molecular Beam Deposition

1995 ◽  
Vol 34 (Part 1, No. 7B) ◽  
pp. 3884-3888 ◽  
Author(s):  
Takayoshi Hayashi ◽  
Tohru Maruno ◽  
Akira Yamashita ◽  
Stefan Fölsch ◽  
Hirohisa Kanbara ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Molecular Beam Deposition ◽  
Beam Deposition
Sign in / Sign up

Export Citation Format

Share Document