Molecular beam deposition of high quality silicon oxide dielectric films

1995 ◽  
Vol 148 (4) ◽  
pp. 336-344 ◽  
Author(s):  
Naresh Chand ◽  
J.E. Johnson ◽  
J.W. Osenbach ◽  
W.C. Liang ◽  
L.C. Feldman ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Silicon Oxide ◽  
Dielectric Films ◽  
High Quality ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Stress free and moisture insensitive silicon oxide dielectric films formed by molecular‐beam deposition

1995 ◽  
Vol 78 (5) ◽  
pp. 3315-3322 ◽  
Author(s):  
Naresh Chand ◽  
R. R. Kola ◽  
R. L. Opila ◽  
R. B. Comizzoli ◽  
H. Krautter ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Silicon Oxide ◽  
Dielectric Films ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Optical and structural properties of silicon-rich silicon oxide films: Comparison of ion implantation and molecular beam deposition methods

2011 ◽  
Vol 208 (9) ◽  
pp. 2176-2181 ◽  
Author(s):  
Timur Nikitin ◽  
Kerttu Aitola ◽  
Sergei Novikov ◽  
Markku Räsänen ◽  
Rama Velagapudi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Structural Properties ◽  
Molecular Beam ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Tunability of Intrinsic Stress in Siox Dielectric Films Formed by Molecular Beam Deposition

1994 ◽  
Vol 356 ◽  
Author(s):  
Naresh Chand ◽  
R. R. Kola ◽  
J. W. Osenbach ◽  
W. T. Tsang
Keyword(s):  
Tensile Stress ◽  
Molecular Beam ◽  
High Pressures ◽  
Semiconductor Device ◽  
High Vacuum ◽  
Linear Thermal Expansion ◽  
Intrinsic Stress ◽  
Dielectric Films ◽  
Molecular Beam Deposition ◽  
Beam Deposition

AbstractSilicon monoxide (SiO) formed by molecular beam deposition (MBD) has many attractive optical, electrical, mechanical, and chemical properties which make it a suitable dielectric for many semiconductor device applications. It can be thermally evaporated at a much lower temperature than Si, SiO2 or Si3 N4 and it condenses on cooler surfaces in uniform and adherent stoichiometric SiO (x = 1) films when evaporated in high vacuum. At low deposition rates and at high pressures of oxygen, SiOx (1 ≤ x ≤ 2) films result. This allows variation of refractive index, stress and other properties of SiOx with x. In general, the SiO (x = l) films are under tensile stress <100 MPa which is significantly lower than that observed in other dielectric films. Slight introduction of oxygen during deposition reduces the tensile stress; at an O2 pressure of 5 × 10−7 Torr and above, the films are in compression. This allows the tunability of stress in SiOx films and deposition of films essentially free from stress. Furthermore, both Si and SiO have similar values of the linear thermal expansion coefficient (average values between 23 °C and 350°C: 3.37 × 10−6°C−1 and 2.7 × 10−6°C−1, respectively). As a result, SiOx/Si films develop little thermal stress during thermal cycling.

Ozone-enhanced molecular beam deposition of nickel oxide (NiO) for sensor applications

1997 ◽  
Vol 310 (1-2) ◽  
pp. 19-23 ◽  
Author(s):  
Alexandra Neubecker ◽  
Thomas Pompl ◽  
Theodor Doll ◽  
Walter Hansch ◽  
Ignaz Eisele
Keyword(s):  
Nickel Oxide ◽  
Molecular Beam ◽  
Sensor Applications ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Heteroepitaxial properties of Si1−x−yGexCy on Si(100) grown by combined ion- and molecular-beam deposition

1997 ◽  
Vol 81 (7) ◽  
pp. 3081-3091 ◽  
Author(s):  
Harald Jacobsson ◽  
Joan Xiang ◽  
Nicole Herbots ◽  
Shawn Whaley ◽  
Peihua Ye ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Deposition ◽  
Beam Deposition

scholarly journals Controlling the Early Stages of Pentacene Growth by Supersonic Molecular Beam Deposition

2007 ◽  
Vol 98 (7) ◽  
Author(s):  
Yu Wu ◽  
Tullio Toccoli ◽  
Norbert Koch ◽  
Erica Iacob ◽  
Alessia Pallaoro ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Supersonic Molecular Beam ◽  
Early Stages ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Structural and Optical Properties of In-Plane Ordered Metallo-Phthalocyanine Thin Films Formed on Sapphire by Organic Molecular Beam Deposition

1995 ◽  
Vol 34 (Part 1, No. 7B) ◽  
pp. 3884-3888 ◽  
Author(s):  
Takayoshi Hayashi ◽  
Tohru Maruno ◽  
Akira Yamashita ◽  
Stefan Fölsch ◽  
Hirohisa Kanbara ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Molecular Beam Deposition ◽  
Beam Deposition

scholarly journals Synthesis, spectroscopic characterization and thermogravimetric analysis of two series of substituted (metallo)tetraphenylporphyrins

2017 ◽  
Vol 8 ◽  
pp. 1191-1204 ◽  
Author(s):  
Rasha K Al-Shewiki ◽  
Carola Mende ◽  
Roy Buschbeck ◽  
Pablo F Siles ◽  
Oliver G Schmidt ◽  
...  
Keyword(s):  
Thermogravimetric Analysis ◽  
Molecular Beam ◽  
Elevated Temperatures ◽  
Oxalyl Chloride ◽  
Spectroscopic Characterization ◽  
Subsequent Treatment ◽  
Ionization Mass ◽  
Molecular Beam Deposition ◽  
Vis Spectroscopy ◽  
Beam Deposition

Subsequent treatment of H2TPP(CO2H)4 (tetra(p-carboxylic acid phenyl)porphyrin, 1) with an excess of oxalyl chloride and HNR2 afforded H2TPP(C(O)NR2)4 (R = Me, 2; iPr, 3) with yields exceeding 80%. The porphyrins 2 and 3 could be converted to the corresponding metalloporphyrins MTPP(C(O)NR2)4 (R = Me/iPr for M = Zn (2a, 3a); Cu (2b, 3b); Ni (2c, 3c); Co (2d, 3d)) by the addition of 3 equiv of anhydrous MCl2 (M = Zn, Cu, Ni, Co) to dimethylformamide solutions of 2 and 3 at elevated temperatures. Metalloporphyrins 2a–d and 3a–d were obtained in yields exceeding 60% and have been, as well as 2 and 3, characterized by elemental analysis, electrospray ionization mass spectrometry (ESIMS) and IR and UV–vis spectroscopy. Porphyrins 2, 2a–d and 3, 3a–d are not suitable for organic molecular beam deposition (OMBD), which is attributed to their comparatively low thermal stability as determined by thermogravimetric analysis (TG) of selected representatives.

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