1784. Epitaxial deposition of silicon using ultra-thin alloy zone crystallization

Vacuum ◽  
1966 ◽  
Vol 16 (9) ◽  
pp. 514
1964 ◽  
Vol 2 (7) ◽  
pp. 201-203 ◽  
Author(s):  
D.T.J. Hurle ◽  
J.B. Mullin ◽  
E.R. Pike

1986 ◽  
Vol 74 ◽  
Author(s):  
B. R. Appleton ◽  
R. A. Zuhr ◽  
T. S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.


Nanoscale ◽  
2020 ◽  
Vol 12 (9) ◽  
pp. 5402-5411 ◽  
Author(s):  
Min Xi ◽  
Björn M. Reinhard

The effect of composition and tip morphology on the far-field optical response of Ag–Au–Ag nanorods with Au bipyramid core is quantified, and the near-field associated with standing plasmon waves in nanorods on silicon substrates is investigated.


2003 ◽  
Vol 384 (4) ◽  
pp. 475-481 ◽  
Author(s):  
D.Q. Shi ◽  
M. Ionescu ◽  
T.M. Silver ◽  
S.X. Dou

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