1478. Changes in angular dependence of the fine structure of secondary electron emission of single crystals in the 2–10 keV range of primary electrons

This program has been organized by the EMSA to commensurate the 50th anniversary of the experimental verification of the wave nature of the electron. Davisson and Germer in the U.S. and Thomson and Reid in Britian accomplished this at about the same time. Their findings were published in Nature in 1927 by mutual agreement since their independent efforts had led to the same conclusion at about the same time. In 1937 Davisson and Thomson shared the Nobel Prize in physics for demonstrating the wave nature of the electron deduced in 1924 by Louis de Broglie.The Davisson experiments (1921-1927) were concerned with the angular distribution of secondary electron emission from nickel surfaces produced by 150 volt primary electrons. The motivation was the effect of secondary emission on the characteristics of vacuum tubes but significant deviations from the results expected for a corpuscular electron led to a diffraction interpretation suggested by Elasser in 1925.

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SEM analysis of DC magnetron sputtered beryllium films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106867 ◽

1988 ◽

Vol 46 ◽

pp. 960-961

Author(s):

E. F. Lindsey ◽

C. W. Price ◽

E. L. Pierce ◽

E. J. Hsieh

Keyword(s):

Fine Structure ◽

Electron Emission ◽

Secondary Electron ◽

Low Voltage ◽

Ion Beam ◽

Secondary Electron Emission ◽

Sem Analysis ◽

Fused Silica ◽

Grain Structure ◽

Silica Substrate

Columnar structures produced by DC magnetron sputtering can be altered by using RF biased sputtering or by exposing the film to nitrogen pulses during sputtering, and these techniques are being evaluated to refine the grain structure in sputtered beryllium films deposited on fused silica substrates. Beryllium is brittle, and fractures in sputtered beryllium films tend to be intergranular; therefore, a convenient technique to analyze grain structure in these films is to fracture the coated specimens and examine them in an SEM. However, fine structure in sputtered deposits is difficult to image in an SEM, and both the low density and the low secondary electron emission coefficient of beryllium seriously compound this problem. Secondary electron emission can be improved by coating beryllium with Au or Au-Pd, and coating also was required to overcome severe charging of the fused silica substrate even at low voltage. The coating structure can obliterate much of the fine structure in beryllium films, but reasonable results were obtained by using the high-resolution capability of an Hitachi S-800 SEM and either ion-beam coating with Au-Pd or carbon coating by thermal evaporation.

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MAXIMUM SECONDARY ELECTRON YIELDS FROM SEMICONDUCTORS AND INSULATORS

Surface Review and Letters ◽

10.1142/s0218625x17500457 ◽

2016 ◽

Vol 24 (04) ◽

pp. 1750045 ◽

Cited By ~ 6

Author(s):

A. G. XIE ◽

Z. H. LIU ◽

Y. Q. XIA ◽

M. M. ZHU

Keyword(s):

Electron Emission ◽

Secondary Electron ◽

Maximum Yield ◽

Secondary Electron Emission ◽

High Energy ◽

Secondary Electrons ◽

Backscattered Electrons ◽

Universal Formula ◽

Yield Formula ◽

Primary Electrons

Based on the processes and characteristics of secondary electron emission and the formula for the yield due to primary electrons hitting on semiconductors and insulators, the universal formula for maximum yield [Formula: see text] due to primary electrons hitting on semiconductors and insulators was deduced, where [Formula: see text] is the maximum ratio of the number of secondary electrons produced by primary electrons to the number of primary electrons. On the basis of the formulae for primary range in different energy ranges of [Formula: see text], characteristics of secondary electron emission and the deduced universal formula for [Formula: see text], the formulae for [Formula: see text] in different energy ranges of [Formula: see text] were deduced, where [Formula: see text] is the primary incident energy at which secondary electron yields from semiconductors and insulators, [Formula: see text], are maximized to maximum secondary electron yields from semiconductors and insulators, [Formula: see text]; and [Formula: see text] is the maximum ratio of the number of total secondary electrons produced by primary electrons and backscattered electrons to the number of primary electrons. According to the deduced formulae for [Formula: see text], the relationship among [Formula: see text], [Formula: see text] and high-energy back-scattering coefficient [Formula: see text], the formulae for parameters of [Formula: see text] and the experimental data as well as the formulae for [Formula: see text] in different energy ranges of [Formula: see text] as a function of [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text] were deduced, where [Formula: see text] and [Formula: see text] are the original electron affinity and the width of forbidden band, respectively. The scattering of [Formula: see text] was analyzed, and calculated [Formula: see text] values were compared with the values measured experimentally. It was concluded that the deduced formulae for [Formula: see text] were found to be universal for [Formula: see text].

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