915. Nucleus growth rate of vacuum-deposited thin films

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

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Effect of deposition conditions on the growth rate and electrical properties of ZnO thin films grown by MOCVD

physica status solidi (c) ◽

10.1002/pssc.200776827 ◽

2008 ◽

Vol 5 (2) ◽

pp. 563-565 ◽

Cited By ~ 4

Author(s):

K. T. Roro ◽

J. R. Botha ◽

A. W. R. Leitch

Keyword(s):

Thin Films ◽

Growth Rate ◽

Electrical Properties ◽

Zno Thin Films ◽

Deposition Conditions

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Microstructure Evolution of Ag/TiO2 Thin Film

Magnetochemistry ◽

10.3390/magnetochemistry7010014 ◽

2021 ◽

Vol 7 (1) ◽

pp. 14

Author(s):

Dewi Suriyani Che Halin ◽

Kamrosni Abdul Razak ◽

Mohd Arif Anuar Mohd Salleh ◽

Mohd Izrul Izwan Ramli ◽

Mohd Mustafa Al Bakri Abdullah ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Growth Rate ◽

Synchrotron Radiation ◽

Tio2 Thin Film ◽

Sol Gel ◽

Tio2 Thin Films ◽

Contact Mode ◽

X Ray ◽

Radiation Imaging

Ag/TiO2 thin films were prepared using the sol-gel spin coating method. The microstructural growth behaviors of the prepared Ag/TiO2 thin films were elucidated using real-time synchrotron radiation imaging, its structure was determined using grazing incidence X-ray diffraction (GIXRD), its morphology was imaged using the field emission scanning electron microscopy (FESEM), and its surface topography was examined using the atomic force microscope (AFM) in contact mode. The cubical shape was detected and identified as Ag, while the anatase, TiO2 thin film resembled a porous ring-like structure. It was found that each ring that coalesced and formed channels occurred at a low annealing temperature of 280 °C. The energy dispersive X-ray (EDX) result revealed a small amount of Ag presence in the Ag/TiO2 thin films. From the in-situ synchrotron radiation imaging, it was observed that as the annealing time increased, the growth of Ag/TiO2 also increased in terms of area and the number of junctions. The growth rate of Ag/TiO2 at 600 s was 47.26 µm2/s, and after 1200 s it decreased to 11.50 µm2/s and 11.55 µm2/s at 1800 s. Prolonged annealing will further decrease the growth rate to 5.94 µm2/s, 4.12 µm2/s and 4.86 µm2/s at 2400 s, 3000 s and 3600 s, respectively.

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Growth Rate of Spherulites in Thin Films: Direct Evidence of Failure of Traditional Growth Theory

Journal of Macromolecular Science Part B ◽

10.1081/mb-120021609 ◽

2003 ◽

Vol 42 (3-4) ◽

pp. 833-846

Author(s):

Yasutoshi Tanzawa

Keyword(s):

Thin Films ◽

Growth Rate ◽

Direct Evidence ◽

Growth Theory

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Growth Rate and Temperature Dependence of Oxygen Incorporation in Si1-XGex Thin Films

ECS Meeting Abstracts ◽

10.1149/ma2016-02/30/1999 ◽

2016 ◽

Keyword(s):

Thin Films ◽

Growth Rate ◽

Temperature Dependence ◽

Oxygen Incorporation

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The Effect of Carrier Gas and Reactor Pressure on Gallium Nitride Growth in MOCVD Manufacturing Process

Journal of Heat Transfer ◽

10.1115/1.4043895 ◽

2019 ◽

Vol 141 (8) ◽

Cited By ~ 1

Author(s):

Omar Jumaah ◽

Yogesh Jaluria

Keyword(s):

Thin Films ◽

Growth Rate ◽

Gallium Nitride ◽

Chemical Vapor ◽

Wide Band ◽

Rotating Disk ◽

Organic Chemical ◽

Gas Mixture ◽

Carrier Gas ◽

Reactor Pressure

Gallium nitride (GaN) is an attractive material for manufacturing light emitting diodes and other electronic devices due to its wide band-gap and superb optoelectronic performance. The quality of GaN thin film determines the reliability and durability of these devices. Metal-organic chemical vapor deposition (MOCVD) is a common technique used to fabricate high-quality GaN thin films. In this paper, GaN growth rate and uniformity in a vertical rotating disk MOCVD reactor are investigated on the basis of a three-dimensional computational fluid dynamics (CFD) model. GaN growth rate is investigated under the influence of reactor pressure, precursor concentration ratio, and composition of the carrier gas mixture. The numerical simulation shows that the carrier gas mixture and the reactor pressure have significant effects on growth rate and uniformity of GaN thin films. It is also found that an appropriate mixture of N2 and H2 may be employed as the carrier gas to improve the flow field characteristic in the reactor. This results in an improved crystal growth of GaN thin films.

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