Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation

1992 ◽  
Vol 19 (1-4) ◽  
pp. 917-924 ◽  
Author(s):  
A. Gnudi ◽  
D. Ventura ◽  
G. Baccarani ◽  
F. Odeh
VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 239-242
Author(s):  
Maria Cristina Vecchi ◽  
Jan Mohring ◽  
Massimo Rudan

This paper presents a novel numerical scheme applicable to the solution of the Boltzmann transport equation by means of a spherical-harmonics expansion. This scheme improves the solution at low energies, keeping the desired accuracy in the calculation of the mean quantities while saving a significant amount of CPU time. This is important in view of the applications of the method, since the typical number of nodes to be used in the combined space-energy domain is in the range of 104–105.


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