scholarly journals Formation of aluminum films on silicon by ion beam deposition: a comparison with ionized cluster beam deposition

Author(s):  
R.A. Zuhr ◽  
T.E. Haynes ◽  
M.D. Galloway ◽  
S. Tanaka ◽  
A. Yamada ◽  
...  
1992 ◽  
Vol 279 ◽  
Author(s):  
K. Ando ◽  
K. Takahashi ◽  
Y. Takeuchi

ABSTRACTThe ionized cluster beam (ICB) deposition was use to stabilize the metastable zinc-blende (ZB) MnTe films directly on GaAs (100) substrates at 300 °C with MnTe cluster ion beam. Influences of the ionization and the acceleration voltage on film properties were investigated by the reflection high-energy electron diffraction (RHEED), optical reflection, Raman scattering, and photoluminescence. The ZB-MnTe was stabilized by 3kV acceleration of the MnTe cluster beam. These results showed that the ICB deposition is useful to get compounds having crystalline phase different from the structures observed io equilibrium-grown bulk crystals.


Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.


1995 ◽  
Vol 31 (6) ◽  
pp. 2694-2696 ◽  
Author(s):  
M. Tan ◽  
S.-I. Tan ◽  
Yong Shen

2004 ◽  
Vol 85 (9) ◽  
pp. 1595-1597 ◽  
Author(s):  
Jae Kwon Kim ◽  
Kyu Man Cha ◽  
Jung Hyun Kang ◽  
Yong Kim ◽  
Jae-Yel Yi ◽  
...  

2008 ◽  
Vol 516 (23) ◽  
pp. 8604-8608 ◽  
Author(s):  
C. Bundesmann ◽  
I.-M. Eichentopf ◽  
S. Mändl ◽  
H. Neumann

1999 ◽  
Vol 198-199 ◽  
pp. 731-733 ◽  
Author(s):  
D.E Joyce ◽  
N.D Telling ◽  
J.A Van den Berg ◽  
D.G Lord ◽  
P.J Grundy

2011 ◽  
Vol 471 (21-22) ◽  
pp. 770-773 ◽  
Author(s):  
F. Feng ◽  
K. Shi ◽  
Z. Wang ◽  
B.-J. Yan ◽  
Z.-J. Zhao ◽  
...  

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