Silicon oxide thin films obtained by Ar+ bombardment of Si(100) in oxygen atmosphere at room temperature

1996 ◽  
Vol 116 (1-4) ◽  
pp. 416-419 ◽  
Author(s):  
A. Terrasi ◽  
J. Almeida ◽  
C. Coluzza ◽  
G. Margaritondo
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxygen Atmosphere ◽  
Oxide Thin Films

High-density plasma silicon oxide thin films grown at room-temperature

2008 ◽  
Vol 85 (5-6) ◽  
pp. 1245-1247
Author(s):  
M.E. Vlachopoulou ◽  
P. Dimitrakis ◽  
A. Tserepi ◽  
V.Em. Vamvakas ◽  
S. Koliopoulou ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Silicon Oxide ◽  
High Density ◽  
Oxide Thin Films ◽  
Density Plasma

Changes in Structure and Composition of Silicon Oxide Thin Films Induced by Ultraviolet Illumination

1996 ◽  
Vol 441 ◽  
Author(s):  
E. G. Parada ◽  
P. González ◽  
B. León ◽  
M. Pérez-Amor ◽  
M. F. DA Silva ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Hydroxyl Groups ◽  
Elastic Recoil ◽  
Oxide Thin Films ◽  
Tetrahedral Configuration ◽  
Illumination Time ◽  
Uv Illumination

AbstractThe transformation of silicon oxide thin films at room-temperature by UV-photons provided by a Xe2* incoherent excimer lamp (λ = 172 nm, Δλ = 14 nm) was studied. Films were produced at low-temperature (T = 260 °C) by ArF laser-induced CVD (LCVD) in parallel configuration from a silane/nitrous oxide/argon gas mixture. The silicon oxide films were irradiated in several consecutive steps to follow-up the modifications with the illumination time. Rutherford backscattering (RBS), infrared (IR) and X-ray photoelectron (XPS) spectroscopies, ellipsometry, and elastic recoil detection analysis (ERDA) were used to characterize the effects of the irradiation on the structure, composition, density, and hydrogen content.Under the UV illumination the as-deposited film evolves from a suboxide film (SiO1.6) to a stoichiometric silicon dioxide (SiO2), and its originally strained structure changes towards a relaxed tetrahedral configuration. The UV irradiation is able to anneal at room temperature the silicon oxide films breaking the Si-H bonds and incorporating new SiO and hydroxyl groups in a relaxed network. The hydrogen does not effuse out, but remains in the film as molecular hydrogen and/or forming silanol or water groups.

scholarly journals Sensing mechanism of an optimized room temperature optical hydrogen gas sensor made of zinc oxide thin films

2020 ◽  
Vol 9 (5) ◽  
pp. 10624-10634
Author(s):  
Siti Nor Aliffah Mustaffa ◽  
Nurul Assikin Ariffin ◽  
Ahmed Lateef Khalaf ◽  
Mohd. Hanif Yaacob ◽  
Nizam Tamchek ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Gas Sensor ◽  
Room Temperature ◽  
Hydrogen Gas ◽  
Oxide Thin Films ◽  
Sensing Mechanism

Facile Fabrication Procedure for C60-Doped Silicon Oxide Thin Films

1997 ◽  
Vol 26 (10) ◽  
pp. 995-996 ◽  
Author(s):  
Isao Hasegawa ◽  
Koji Shibusa ◽  
Satoshi Kobayashi ◽  
Shuichi Nonomura ◽  
Shoji Nitta
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Oxide Thin Films ◽  
Doped Silicon ◽  
Fabrication Procedure ◽  
Facile Fabrication

Optical Degradation of Indium Tin Oxide Thin Films Induced by Hydrogen-Related Room Temperature Reduction

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L546-L548 ◽  
Author(s):  
Yu Wang ◽  
Wan Ping Chen ◽  
Kei Chun Cheng ◽  
Helen Lai Wah Chan ◽  
Chung Loong Choy
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Temperature Reduction

IR ellipsometry investigations of N2O-nitrided silicon oxide thin films on silicon

1993 ◽  
Vol 234 (1-2) ◽  
pp. 337-341 ◽  
Author(s):  
M. Weidner ◽  
A. Röseler ◽  
M. Eichler
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Oxide Thin Films

Laser Ablation Deposition of Germanium Oxide Thin Films

1992 ◽  
Vol 285 ◽  
Author(s):  
Paul J. Wolf ◽  
Thomas M. Christensen ◽  
Nathan G. Coit ◽  
Richard W. Swinford
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Auger Electron ◽  
Radial Variation ◽  
Oxygen Atmosphere ◽  
Germanium Oxide ◽  
Oxide Content ◽  
Infrared Transmission ◽  
Oxide Thin Films ◽  
Compositional Information

ABSTRACTLaser pulsed sputtering of GeO2 targets in both vacuum and oxygen environments is us;ed to produce germanium oxide thin films. Infrared transmission and Auger electron spectroscopies are employed to infer compositional information on the films. The films grown in vacuum are oxygen deficient and they show a radial variation in the metal to oxide content. In contrast, the films grown in an oxygen atmosphere appear stoichiometric along the entire film.

ChemInform Abstract: First Observation of Strained Siloxane Bonds on Silicon Oxide Thin Films.

ChemInform ◽  
2010 ◽  
Vol 24 (41) ◽  
pp. no-no
Author(s):  
C.-M. CHIANG ◽  
B. R. ZEGARSKI ◽  
L. H. DUBOIS
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Oxide Thin Films
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