UV laser etching processes for film layers used in silicon integrated circuits

1989 ◽  
Vol 36 (1-4) ◽  
pp. 257-266 ◽  
Author(s):  
G.L. Loper ◽  
S.H. Suck-Salk ◽  
M.D. Tabat
Keyword(s):  
Integrated Circuits ◽  
Uv Laser ◽  
Laser Etching ◽  
Silicon Integrated Circuits

Electrical Invasiveness of Grinding and Polishing Silicon Integrated Circuits Down to 1 μm Remaining Silicon Thickness

2016 ◽  
Author(s):  
Robert Chivas ◽  
Scott Silverman ◽  
Michael DiBattista ◽  
Ulrike Kindereit
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Electron Hole ◽  
Analysis Techniques ◽  
Silicon Integrated Circuits ◽  
Electron Hole Pair ◽  
Pair Generation ◽  
Silicon Thickness ◽  
Performance Timing ◽  
Grinding And Polishing

Abstract Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. When the remaining silicon is reduced, some redistribution of stress is expected, possibly altering the performance (timing) of integrated circuits in addition to electron-hole pair generation. In this work, a study of the electrical invasiveness due to grinding and polishing silicon integrated circuits to ultra-thin (< 5 um global, ~ 1 um local) remaining thickness is presented.

Electro‐optic sampling of high‐speed silicon integrated circuits using a GaAs probe tip

1991 ◽  
Vol 59 (2) ◽  
pp. 146-148 ◽  
Author(s):  
Michael S. Heutmaker ◽  
George T. Harvey ◽  
Philip F. Bechtold
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Electro Optic ◽  
Silicon Integrated Circuits

scholarly journals Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Photonics ◽  
2018 ◽  
Vol 5 (4) ◽  
pp. 50 ◽  
Author(s):  
Minoru Fujishima
Keyword(s):  
Integrated Circuits ◽  
Silicon Germanium ◽  
Cmos Integrated Circuits ◽  
Future Research ◽  
Wireless Transceivers ◽  
Terahertz Band ◽  
Silicon Integrated Circuits ◽  
Terahertz Communication ◽  
Bicmos Integrated Circuits ◽  
Silicon Cmos

In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date. Terahertz communication using the 300 GHz band has nonetheless attracted attention based on the expectation that an unallocated frequency band exceeding 275 GHz can be used for communication in the future. Research into wireless transceivers using BiCMOS integrated circuits with silicon germanium transistors and advanced miniaturized CMOS integrated circuits has increased in this 300 GHz band. In this paper, we will outline the terahertz communication technology using silicon integrated circuits available from mass production, and discuss its applications and future.

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