Kinetics of ion beam deposition of carbon at room temperature

1992 ◽  
Vol 51 (1-3) ◽  
pp. 247-251 ◽  
Author(s):  
R.A. Kant ◽  
G.K. Hubler
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Kinetics Of ◽  
Beam Deposition

1X Thin Films Prepared By Mass Separated Ion Beam Deposition

1994 ◽  
Vol 354 ◽  
Author(s):  
H. C. Hofsäss ◽  
C. Ronntng ◽  
U. Griesmeier ◽  
M. Gross
Keyword(s):  
Thermal Activation ◽  
Room Temperature ◽  
Ion Beam ◽  
Ir Absorption ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
Ion Energies ◽  
Substrate Temperatures ◽  
Absorption Measurements ◽  
Beam Deposition

AbstractWe have studied the growth and the properties of CN films prepared by deposition of mass separated 12C+ and 14N+ ions. The film thickness and density were determined as a function of ion energy between 20 eV and 500 eV and for substrate temperatures of 20 °C and 350 °C. Sputtering effects limit the maximum N concentration to about 30 - 40 at.% even for ion energies as low as 20 eV. IR absorption measurements indicate predominantly C-N and C=N bonding and an amorphous or strongly disordered CN-network. For room temperature deposited CN films with N concentrations up to 25 at.% I-V curves of metal-CN-metal devices show Frenkel-Poole behavior due to field-enhanced thermal activation of localized electrons. Films deposited at 350 °C have N concentrations below 15 at.% and graphitic properties like low resistivity and a density close to graphite.

Ion beam deposition of tantalum pentoxide thin film at room temperature

2008 ◽  
Vol 26 (4) ◽  
pp. 991-995 ◽  
Author(s):  
W. Kulisch ◽  
D. Gilliland ◽  
G. Ceccone ◽  
H. Rauscher ◽  
L. Sirghi ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Ion Beam ◽  
Tantalum Pentoxide ◽  
Ion Beam Deposition ◽  
Beam Deposition

Ion Beam Deposition from Colloidal CdSe/ZnS Nanocrystals Solutions for Fabricating Electroluminescent Device

2007 ◽  
Vol 1030 ◽  
Author(s):  
Yuki Tani ◽  
Satoshi Kobayashi ◽  
Hiroshi Kawazoe
Keyword(s):  
Excited States ◽  
Room Temperature ◽  
Ion Beam ◽  
Luminescent Properties ◽  
Ambient Atmosphere ◽  
Time Resolved ◽  
Electroluminescent Devices ◽  
Ion Beam Deposition ◽  
Ac Drive ◽  
Beam Deposition

AbstractWe have already reported AC-drive CdSe/ZnS quantum dot (QD) inorganic electroluminescent (EL) devices from colloidal solution. The EL spectra of the devices reproduced photoluminescent spectra of the source QD solutions. Furthermore, the observation of time resolved luminescent properties in ambient atmosphere at room temperature, are analyzed for improvements and projection of brightness and efficiency. The results suggest that the lifetimes of excited states in quantum dots are affected by the electric field in the electroluminescent devices.

scholarly journals Room temperature operational single electron transistor fabricated by focused ion beam deposition

2007 ◽  
Vol 102 (2) ◽  
pp. 024316 ◽  
Author(s):  
P. Santosh Kumar Karre ◽  
Paul L. Bergstrom ◽  
Govind Mallick ◽  
Shashi P. Karna
Keyword(s):  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Ion Beam Deposition ◽  
Beam Deposition

Room-temperature growth of epitaxial Fe3O4 films by ion beam deposition

2004 ◽  
Vol 95 (11) ◽  
pp. 7222-7224 ◽  
Author(s):  
Chih-Huang Lai ◽  
Po-Hsiang Huang ◽  
Yu-Jen Wang ◽  
R. T. Huang
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Temperature Growth ◽  
Ion Beam Deposition ◽  
Beam Deposition

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Ion beam deposition of alumina for recording head applications

1995 ◽  
Vol 31 (6) ◽  
pp. 2694-2696 ◽  
Author(s):  
M. Tan ◽  
S.-I. Tan ◽  
Yong Shen
Keyword(s):  
Ion Beam ◽  
Recording Head ◽  
Ion Beam Deposition ◽  
Beam Deposition
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