1X Thin Films Prepared By Mass Separated Ion Beam Deposition

1994 ◽  
Vol 354 ◽  
Author(s):  
H. C. Hofsäss ◽  
C. Ronntng ◽  
U. Griesmeier ◽  
M. Gross
Keyword(s):  
Thermal Activation ◽  
Room Temperature ◽  
Ion Beam ◽  
Ir Absorption ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
Ion Energies ◽  
Substrate Temperatures ◽  
Absorption Measurements ◽  
Beam Deposition

AbstractWe have studied the growth and the properties of CN films prepared by deposition of mass separated 12C+ and 14N+ ions. The film thickness and density were determined as a function of ion energy between 20 eV and 500 eV and for substrate temperatures of 20 °C and 350 °C. Sputtering effects limit the maximum N concentration to about 30 - 40 at.% even for ion energies as low as 20 eV. IR absorption measurements indicate predominantly C-N and C=N bonding and an amorphous or strongly disordered CN-network. For room temperature deposited CN films with N concentrations up to 25 at.% I-V curves of metal-CN-metal devices show Frenkel-Poole behavior due to field-enhanced thermal activation of localized electrons. Films deposited at 350 °C have N concentrations below 15 at.% and graphitic properties like low resistivity and a density close to graphite.

Ion Beam Deposition of Epitaxial Silicon Films

1997 ◽  
Vol 485 ◽  
Author(s):  
H. R. Khan ◽  
H. Frey
Keyword(s):  
Ion Beam ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Si Films ◽  
Silane Plasma ◽  
Beam Deposition

AbstractSilicon films of thicknesses (100 – 800 nm) are deposited on Si[111] substrate at 490°C using Si+ ions of energies (20 – 70 eV) from Silane plasma. The structure of the films depends on the energy of Si+ ions and the film grows epitaxially for ion energy <20 eV. Si films are analyzed by X-ray diffraction technique.

Direct ion beam deposition of carbon films on silicon in the ion energy range of 15–500 eV

1991 ◽  
Vol 70 (10) ◽  
pp. 5623-5628 ◽  
Author(s):  
W. M. Lau ◽  
I. Bello ◽  
X. Feng ◽  
L. J. Huang ◽  
Qin Fuguang ◽  
...  
Keyword(s):  
Energy Range ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
Beam Deposition

The Effects of Ion Energy on Carbon and Tungsten Films Fabricated by Direct Ion Beam Deposition and Ion Beam Sputtering Deposition

1991 ◽  
Vol 223 ◽  
Author(s):  
I. Kataoka ◽  
K. Ito ◽  
N. Hoshi ◽  
T. Yonemitsu ◽  
K. Etoh ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Beam ◽  
Amorphous Structure ◽  
Film Structure ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Sputtering Deposition ◽  
Ion Beam Deposition ◽  
Beam Sputtering ◽  
Beam Deposition

ABSTRACTThe x-ray reflectivity and surface morphology of C/W multilayers fabricated by ion beam sputtering (IBS) method was evaluated. Also the surface roughness and amorphous structure of C and W films fabricated by direct ion beam deposition (DIBD) method were evaluated as a function of ion energy. The reflectivity was measured by the C-K line (4.47nm) and STM was used for surface roughness measurement and root-mean-square value of correlation function of the RHEED pattern was used for evaluation of amorphous structure. The reflectivity of C/W multilayer was about 69% of the theoretical one, and micro-columnar structures were observed from STM images. The film structure and surface roughness of DIBD film were changed with the depositing ion energy. The surface roughness of films becomes smaller as the depositing energy becomes higher in the energy range from 20 to 140eV.

Elastic Properties of Diamond-Like Amorphous Carbon Films Grown by Computer Simulation of Ion-Beam Deposition Process

2000 ◽  
Vol 648 ◽  
Author(s):  
A.Yu. Belov ◽  
H.U. Jäger
Keyword(s):  
Amorphous Carbon ◽  
Elastic Constants ◽  
Ion Beam ◽  
Carbon Films ◽  
Atomic Scale ◽  
Ion Energy ◽  
Amorphous Carbon Films ◽  
Ion Beam Deposition ◽  
Bulk Stress ◽  
Beam Deposition

AbstractAtomic-scale calculations were performed for the first time to investigate mechanical properties of amorphous carbon films grown by a realistic simulation of ion-beam deposition. The simulated films have a thickness of a few nanometers and reproduce the main structural features of real films, with the bulk content of sp3 bonded atoms varying from 35 to 95%, depending on the ion energy (E = 20-80 eV). Employing empirical interatomic potentials for carbon, the average bulk stresses as well as the atomic-level stress distributions were calculated and analysed. The bulk stresses were found to depend not only on the ion energy, but also on the film quality, in particular, on such structural inhomogeneities as local fluctuations of the sp3 fraction with the depth. The local variation of the bulk stress from the average value considerably increases as the local content of sp2 bonded atoms increases. Elastic constants of amorphous carbon films were also computed using the method of inner elastic constants, which allows for the stress dependence of elastic constants to be analysed. The variation of Young's modulus as a function of the lateral bulk stress in an amorphous film is demonstrated.

Room Temperature Nitridation and Oxidation of Si, Ge and Mbegrown Sige Using Low Energy Ion Beams (0.1-1 Kev).

1991 ◽  
Vol 223 ◽  
Author(s):  
O. Vancauwenberghe ◽  
O. C. Hellman ◽  
N. Herbots ◽  
J. L. Olson ◽  
W. J. Tan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Film Properties ◽  
Dielectric Thin Films ◽  
Ion Energy ◽  
Insulating Films ◽  
Ion Energies ◽  
Energy Dependent

ABSTRACTDirect Ion Beam Nitridation (IBN) and Oxidation (IBO) of Si, Ge, and Si0.8Ge0.2 were investigated at room temperature as a function of ion energy. The ion energies were selected between 100 eV and 1 keV to establish the role of energy on phase formation and film properties. Si0.8Ge0.2 films were grown by MBE on Si (100) and transferred in UHV to the ion beam processing chamber. The modification of composition and chemical binding was measured as a function of ion beam exposure by in situ XPS analysis. The samples were nitridized or oxidized using until the N or O 1s signal reached saturation for ion doses between 5×1016 to 1×1017 ions/cm2. Combined characterization by XPS, SEM, ellipsometry and cross-section TEM showed that insulating films of stoichiometric SiO2 and Si-rich Si3N4 were formed during IBO and IBN of Si at all energies used. The formation of Ge dielectric thin films by IBO and IBN was found to be strongly energy dependent and insulating layers could be grown only at the lower energies (E ≤ 200 eV). In contrast to pure Ge, insulating SiGe-oxide and SiGe-nitride were successfully formed on Si0.8Ge0.20.2 at all energies studied.

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