Effect of residual stresses on the strength, adhesion and wear resistance of SiC coatings obtained by plasma-enhanced chemical vapor deposition on low alloy steel

1994 ◽  
Vol 70 (1) ◽  
pp. 43-48 ◽  
Author(s):  
T.Z. Kattamis ◽  
M. Chen ◽  
S. Skolianos ◽  
B.V. Chambers
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor Deposition ◽  
Residual Stresses ◽  
Alloy Steel ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Alloy Steel ◽  
Sic Coatings

Examination of the material properties and performance of thin-diamond film cutting tool inserts produced by arc-jet and hot filament chemical vapor deposition

1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Cutting Tool ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
And Performance ◽  
Hot Filament

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.

Residual stresses in chemical vapor deposition free-standing diamond films by X-ray diffraction analyses

2000 ◽  
Vol 288 (2) ◽  
pp. 217-222 ◽  
Author(s):  
O Durand ◽  
R Bisaro ◽  
C.J Brierley ◽  
P Galtier ◽  
G.R Kennedy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Residual Stresses ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray

A study on the residual stress measurement methods on chemical vapor deposition diamond films

1998 ◽  
Vol 13 (11) ◽  
pp. 3027-3033 ◽  
Author(s):  
Jung Geun Kim ◽  
Jin Yu
Keyword(s):  
Residual Stress ◽  
Chemical Vapor Deposition ◽  
Tensile Stress ◽  
Residual Stresses ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Peak Shift ◽  
Intrinsic Stress ◽  
Chemical Vapor Deposition Diamond

Diamond films were deposited on the p-type Si substrate with the hot filament chemical vapor deposition (HFCVD). Residual stresses in the films were measured in air by the laser curvature, the x-ray diffraction (XRD) dϕψ − sin2ψ, and the Raman peak shift methods. All of the measuring methods showed similar behaviors of residual stress that changed from a compressive to a tensile stress with increasing the film thickness. However, values of residual stresses obtained through the Raman and XRD methods were 3–4 times higher than those of the curvature method. These discrepancies involved the setting of materials constants of CVD diamond film, and determination of a peak shifting on the XRD and Raman method. In order to elucidate the disparity, we measured a Young's moduli of diamond films by using the sonic resonance method. In doing so, the Raman and XRD peak shift were calibrated by bending diamond/Si beams with diamond films by a known amount, with stress levels known a priori from the beam theory, and by monitoring the peak shifts simultaneously. Results of each measuring method showed well coincidental behaviors of residual stresses which have the stress range from −0.5 GPa to +0.7 GPa, and an intrinsic stress was caused about +0.7 GPa with tensile stress.

Nanostructured Diamond Coatings for Dry Drilling

2009 ◽  
Author(s):  
Kevin Chou ◽  
Raymond Thompson ◽  
Feng Qin ◽  
Dustin Nolen ◽  
Chao Miao
Keyword(s):  
Chemical Vapor Deposition ◽  
Residual Stresses ◽  
Vapor Deposition ◽  
Performance Enhancement ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Gas Mixture ◽  
Diamond Coatings ◽  
Thermal Mismatch ◽  
Dry Drilling

In this study, nanostructured diamond (NSD) films were grown, by microwave plasma assisted chemical vapor deposition (MP-CVD) technology, on WC-Co drills for performance enhancement in dry drilling of A390 alloys. Surface cobalt was removed by a well-controlled precision etching process. H2/CH4 gas mixture with a small amount of N2 was applied to produce NSD films. Moreover, slight hone was applied to the cutting edges prior to the NSD deposition to relieve residual stresses generated by thermal mismatch in depositions. The results show feasibility of dry drilling of A390 alloys by NSD coated drills, substantially outperforming carbide drills.

Surface and interface characteristics of SiC coatings by chemical vapor deposition

2005 ◽  
Vol 40 (8) ◽  
pp. 2109-2111 ◽  
Author(s):  
Rong-Jun Liu ◽  
Chang-Rui Zhang ◽  
Xiao-Yang Liu ◽  
Xin-Gui Zhou ◽  
Ying-Bin Cao
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Surface And Interface ◽  
Interface Characteristics ◽  
Sic Coatings

Thermodynamic Analysis of Chemical Vapor Deposition Progress for SiC Coatings

2014 ◽  
Vol 633 ◽  
pp. 183-188 ◽  
Author(s):  
Ming Wei Chen ◽  
Hai Peng Qiu ◽  
Jian Jiao ◽  
Xiu Qian Li ◽  
Yu Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermodynamic Analysis ◽  
Reaction Temperature ◽  
Vapor Deposition ◽  
Raw Materials ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
System Pressure ◽  
Optimal Reaction Temperature ◽  
Sic Coatings

Equilibrium compositions of chemical vapor deposition progress for silicon carbide (CVD-SiC) coatings with MTS/H2 mixture system were calculated by means of HSC Chemistry5.0 code, and influences of the reaction temperature (T), the system pressure (P) and the composition of raw materials (molar ratio of H2 to SiCH3Cl3, β) were investigated. Thermodynamic analysis showed that the value of nC /nSiC in reaction product decreased to a minimum and then increased with the increase of the reaction temperature between 700-1600°C, which meant an optimal reaction temperature existed theoretically for CVD-SiC coatings with highest purity. Furthermore, CVD-SiC coatings with high purity were obtained by experiments under the reaction pressure of 10kPa, H2/SiCH3Cl3 value of 10 and reacton temperature of 1100°C, which was in accordance with the theoretical prediction.

Characterization of Silicon Carbide Films Prepared by Chemical Vapor Deposition

2010 ◽  
Vol 177 ◽  
pp. 78-81
Author(s):  
Fan Tao Meng ◽  
Shan Yi Du ◽  
Yu Min Zhang
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Crystalline Phase ◽  
Chemical Vapor ◽  
The Mean ◽  
Sic Coatings ◽  
Deposited Film ◽  
Deposited Films

Silicon carbide prepared by chemical vapor deposition (CVD) is one of the important candidate materials for space mirror and high-power mirror such as laser mirror, because of its superior performances such as low density, high melting point and homogeneity. In this paper, the SiC coatings were deposited on the substrates of reaction bonded silicon carbide (RB-SiC) by CVD process. Then, the morphologies of the deposits were examined with scanning electron microscopy. The crystalline phase of the as-deposited films was confirmed with X-ray diffractometry. And the adhesion between the CVD film and the substrate was rated with scraping method. As a result, the morphologies of the deposits, i.e. whiskers at 1050°C or films at 1100°C, are different from that of the substrate. And the mean diameter of the deposits at 1100°C is larger than that at 1050°C. Furthermore, the crystalline phase of the as-deposited film is determined as β-SiC and the adhesion is firm enough not to be peeled off with the scraping test.

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