Transmission electron microscopy and scanning electron microscopy characterization of GaP grown by metal-organic chemical vapor deposition on silicon substrates

Solar Cells ◽  
1987 ◽  
Vol 21 (1-4) ◽  
pp. 459-460
Author(s):  
M.M. Al-Jassim
1996 ◽  
Vol 466 ◽  
Author(s):  
Z. L. Wang ◽  
Z. R. Dai

ABSTRACTInterface microstractures of BaTiO3/LaAlO3 grown by metal-organic chemical vapor deposition (MOCVD) are studied using high-resolution transmission electron microscopy (HRTEM). Interface dislocations in BaTiO3/LaAlO3 have been shown to be directly linked with the 90° domain boundaries in BaTiO3. This association is a result of strain relief due to a phase transformation on cooling from the growth temperature. The {100} surfaces of BaTiO3 are terminated with the Ba-O layer.


2008 ◽  
Vol 104 (2) ◽  
pp. 024301 ◽  
Author(s):  
David F. Brown ◽  
Stacia Keller ◽  
Feng Wu ◽  
James S. Speck ◽  
Steven P. DenBaars ◽  
...  

1999 ◽  
Vol 38 (Part 1, No. 9B) ◽  
pp. 5437-5441 ◽  
Author(s):  
Kosuke Shiratsuyu ◽  
Atsushi Sakurai ◽  
Katsuhiko Tanaka ◽  
Yukio Sakabe

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