Superconducting (Sr, Nd) CuOy thin films with infinite-layer structure

1992 ◽  
Vol 196 (1-2) ◽  
pp. 14-16 ◽  
Author(s):  
H. Adachi ◽  
T. Satoh ◽  
Y. Ichikawa ◽  
K. Setsune ◽  
K. Wasa
Keyword(s):  
Thin Films ◽  
Layer Structure ◽  
Infinite Layer

Single-Crystal Thin Films of SrFeO2 and LaNiO2 with Infinite-Layer Structures

2008 ◽  
Vol 1148 ◽  
Author(s):  
Yuichi Shimakawa ◽  
Satoru Inoue ◽  
Masanori Kawai ◽  
Noriya Ichikawa ◽  
Masaichiro Mizumaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Layer Structure ◽  
Reduction Process ◽  
Transition Metal Ions ◽  
Epitaxial Thin Films ◽  
Infinite Layer ◽  
Oxygen Ions ◽  
Structure Framework ◽  
Layer Structures

AbstractInfinite-layer-structure epitaxial thin films of SrFeO2 and LaNiO2 respectively were prepared by low-temperature reduction with CaH2 from brownmillerite SrFeO2.5 and perovskite LaNiO3 epitaxial thin films grown on single-crystal substrates. The reduction process, removing oxygen ions from the perovskite-structure framework and causing rearrangements of oxygen ions, topotactically transforms the initial compounds to the c-axis oriented infinite-layer-structure epitaxial thin films. Consequently, the oxidation state of transition-metal ions in the film changed in wide ranges.

Growth of Sr1−xNdxCuOy Thin Films by Rf-Magnetron Sputtering and Pulsed-Laser Deposition

1992 ◽  
Vol 275 ◽  
Author(s):  
Nobuyuki Sugii ◽  
Michiharu Ichikawa ◽  
Koichi Kubo ◽  
Takeshi Sakurai ◽  
Kiyoshi Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Pulsed Laser Deposition ◽  
Layer Structure ◽  
Pulsed Laser ◽  
Rf Magnetron Sputtering ◽  
Lattice Parameter ◽  
Laser Deposition ◽  
Infinite Layer ◽  
Sputter Deposited

ABSTRACTSr1−xNdxCuOy thin films are grown on SrTiO3 substrates by rf-magnetron sputtering and pulsed-laser deposition. The sputter-deposited film with x=0 has an “infinite-layer” structure whose lattice constants are: α=0.390 nm and c=0.347 nm. When x is larger than 0.1, the films contain a phase of the Sr14CuO24O41 structure. The laser-deposited films of Sr1−xNdxCuOy with x≤.075 were single phase of the “infinite-layer” structure. The lattice parameter c decreased and the lattice parameter αincreased, as the Nd content, x, increased. The films with α=0.10 and 0.125 exhibited superconducting onset temperatures around 26 K. Weak Meissner signals were observed for these films at temperatures below 30 K.

Reversible changes of epitaxial thin films from perovskite LaNiO3 to infinite-layer structure LaNiO2

2009 ◽  
Vol 94 (8) ◽  
pp. 082102 ◽  
Author(s):  
Masanori Kawai ◽  
Satoru Inoue ◽  
Masaichiro Mizumaki ◽  
Naomi Kawamura ◽  
Noriya Ichikawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Layer Structure ◽  
Epitaxial Thin Films ◽  
Infinite Layer

Topotactic Changes in Thin Films of Brownmillerite SrFeO2.5Grown on SrTiO3Substrates to Infinite-Layer Structure SrFeO2

2010 ◽  
Vol 10 (11) ◽  
pp. 4713-4715 ◽  
Author(s):  
Yuichi Shimakawa ◽  
Satoru Inoue ◽  
Mitsutaka Haruta ◽  
Masanori Kawai ◽  
Kazuya Matsumoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Layer Structure ◽  
Infinite Layer

scholarly journals Effect of Prefabricated Layer Structure on Properties of CZTS Thin Films and Solar Cells

2020 ◽  
Vol 571 ◽  
pp. 012033
Author(s):  
Wenbin Hao ◽  
Jinze Li ◽  
Wei Li ◽  
Jiansheng Zhao ◽  
Jianfeng Chen
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Layer Structure ◽  
Czts Thin Films

scholarly journals Pressure-induced monotonic enhancement of Tc to over 30 K in the superconducting Pr0.82Sr0.18NiO2 thin films

2021 ◽  
Author(s):  
Ningning Wang ◽  
Mingwei Yang ◽  
Keyu Chen ◽  
Zhen Yang ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pressure Effect ◽  
Ambient Pressure ◽  
Strain Engineering ◽  
Superconducting Properties ◽  
Liquid Pressure ◽  
Infinite Layer ◽  
Effect Of Pressure ◽  
First Time

Abstract The successful synthesis of superconducting nickelate thin films with the highest Tc ~ 15 K has reignited great enthusiasms on this class of potential analogue to high-Tc cuprates suggested decades ago. To pursue higher Tc is always an important task in studying new superconductors. Here we report for the first time the effect of pressure on the superconducting properties of infinite-layer Pr0.82Sr0.18NiO2 thin films by measuring electrical resistivity under various pressures in a cubic anvil cell apparatus. We find that the onset of superconductivity, Tconset, can be enhanced monotonically from ~ 18 K at ambient pressure to ~ 31 K without showing signatures of saturation upon increasing pressure to 12.1 GPa in the presence of liquid pressure transmitting medium. This encouraging result indicates that the Tc of infinite-layer nickelates superconductors can be further raised up by applying higher pressures or strain engineering in the heterostructure films. In addition to the pressure effect, we also discussed the influence of stress/strain on the superconducting properties of the nickelate thin films.

scholarly journals Preparation of Superconducting Thin Films of Infinite-Layer Nickelate Nd0.8Sr0.2NiO2

2021 ◽  
Vol 38 (7) ◽  
pp. 077401
Author(s):  
Qiang Gao ◽  
Yuchen Zhao ◽  
Xing-Jiang Zhou ◽  
Zhihai Zhu
Keyword(s):  
Thin Films ◽  
Superconducting Thin Films ◽  
Infinite Layer

Light Scattering from Pulsed Laser Deposited BaBi4Ti4O15 Thin Films

2000 ◽  
Vol 623 ◽  
Author(s):  
R.K. Soni ◽  
Anju Dixit ◽  
R. S. Katiyar ◽  
A. Pignolet ◽  
K.M. Satyalakshmi ◽  
...  
Keyword(s):  
Thin Films ◽  
Light Scattering ◽  
Room Temperature ◽  
Layer Structure ◽  
Low Frequency ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Frequency Mode ◽  
High Frequency Vibrations ◽  
Low Frequency Mode

AbstractLight scattering investigations are carried out on BaBi4Ti4O15 (BBiT) which is a member of the Bi-layer structure ferroelectric oxide with n = 4. The BBiT thin films, thickness ∼ 300 nm, were grown on epitaxial conducting LaNiO3 electrodes on epitaxial buffer layers on (100) silicon by pulsed laser deposition. Micro-Raman measurements performed on these films reveal a sharp low-frequency mode at 51 cm−1 along with broad highfrequeficy modes corresponding to other lattice vibrations including TiO6 octahedra. No temperature dependence of the low frequency mode is seen while a weak dependence of the broad high frequency vibrations are observed in the mixed oriented regions. Raman polarization carried out at room temperature indicates that the prominent modes have Alg and Eg symmetries in the BaBi4Ti4O15 thin films.

scholarly journals Formation of artificially-Layered Thin-Film Compounds Using Pulsed-Laser Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
David P. Norton ◽  
B. C. Chakoumakos ◽  
D. H. Lowndes ◽  
J. D. Budai
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Layer Structure ◽  
Finite Thickness ◽  
Pulsed Laser ◽  
Unit Cell ◽  
Laser Deposition ◽  
Thickness Variation ◽  
Infinite Layer ◽  
Layered Thin Film

AbstractSuperlattice structures, consisting of SrCuO2, (Sr,Ca)CuO2, and BaCuO2 layers in the tetragonal, "infinite layer" crystal structure, have been grown by pulsed-laser deposition (PLD). Superlattice chemical modulation is observed for structures with component layers as thin as a single unit cell (~3.4 Å), indicating that unit-cell control of (Sr,Ca)CuO2 growth is possible using conventional pulsed-laser deposition over a wide oxygen pressure regime. X-ray diffraction intensity oscillations, due to the finite thickness of the film, indicate that these films are extremely flat with a thickness variation of only ~20 Å over a length scale of several thousand angstroms. Using the constraint of epitaxy to grow metastable cuprates in the infinite layer structure, novel high-temperature superconducting structural families have been formed. IN particular, epitaxially-stabilized SrCuO2/BaCuO2 superlattices, grown by sequentially depositing on lattice-matched (100) SrTiO3 from BaCuO2 and SrCuO2 ablation targets in a PLD system, show metallic conductivity and superconductivity at Tc(onset) ~70 K. these results show that pulsed-laser deposition and epitaxial stabilization have been used to effectively "engineer" artificially-layered thin-film materials.

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