Evidence for flux pinning induced by spatial fluctuation of transition temperatures in single domain (Y1−xPrx)Ba2Cu3O7−δ samples

The intermetallic compound Nb3Sn is a type-II superconductor of interest because it has high values of critical current density Jc in high magnetic fields. One method of forming this compound involves diffusion of Sn into Nb foil containing small amounts of Zr and O. In order to maintain high values of Jc, it is important to keep the grain size in the Nb3Sn as small as possible, since the grain boundaries act as flux-pinning sites. It has been known for many years that Zr and O were essential to grain size control in this process. In previous work, we have shown that (a) the Sn is transported to the Nb3Sn/Nb interface by liquid diffusion along grain boundaries; (b) the Zr and O form small ZrO2 particles in the Nb3Sn grains; and (c) many very small Nb3Sn grains nucleate from a single Nb grain at the reaction interface. In this paper we report the results of detailed studies of the Nb3Sn/Nb3Sn, Nb3Sn/Nb, and Nb3Sn/ZrO2 interfaces.

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Polarity Determination in Sphalerite and Wurtzite Structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100136106 ◽

1990 ◽

Vol 48 (2) ◽

pp. 500-501

Author(s):

Stuart McKernan ◽

C. Barry Carter

Keyword(s):

Opposite Polarity ◽

Single Domain ◽

Polar Material ◽

Electron Microscopic ◽

Dynamical Interaction ◽

X Ray ◽

Polarity Determination ◽

The Absolute ◽

Microscopic Techniques

The determination of the absolute polarity of a polar material is often crucial to the understanding of the defects which occur in such materials. Several methods exist by which this determination may be performed. In bulk, single-domain specimens, macroscopic techniques may be used, such as the different etching behavior, using the appropriate etchant, of surfaces with opposite polarity. X-ray measurements under conditions where Friedel’s law (which means that the intensity of reflections from planes of opposite polarity are indistinguishable) breaks down can also be used to determine the absolute polarity of bulk, single-domain specimens. On the microscopic scale, and particularly where antiphase boundaries (APBs), which separate regions of opposite polarity exist, electron microscopic techniques must be employed. Two techniques are commonly practised; the first [1], involves the dynamical interaction of hoLz lines which interfere constructively or destructively with the zero order reflection, depending on the crystal polarity. The crystal polarity can therefore be directly deduced from the relative intensity of these interactions.

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The stability of dislocation networks under various oxygen-doping conditions in superconducting Bi2Sr2CaCu2Oy single crystals and their influence on the flux pinning properties

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171742 ◽

1994 ◽

Vol 52 ◽

pp. 802-803

Author(s):

Y. Feng ◽

X. Y. Cai ◽

R. J. Kelley ◽

D. C. Larbalestier

Keyword(s):

Single Crystals ◽

Oxygen Content ◽

Basal Plane ◽

Flux Pinning ◽

Pinning Centers ◽

Before And After ◽

Anomalous Peak ◽

Basal Plane Dislocation ◽

The Stability ◽

Further Development

The issue of strong flux pinning is crucial to the further development of high critical current density Bi-Sr-Ca-Cu-O (BSCCO) superconductors in conductor-like applications, yet the pinning mechanisms are still much debated. Anomalous peaks in the M-H (magnetization vs. magnetic field) loops are commonly observed in Bi2Sr2CaCu2Oy (Bi-2212) single crystals. Oxygen vacancies may be effective flux pinning centers in BSCCO, as has been found in YBCO. However, it has also been proposed that basal-plane dislocation networks also act as effective pinning centers. Yang et al. proposed that the characteristic scale of the basal-plane dislocation networksmay strongly depend on oxygen content and the anomalous peak in the M-H loop at ˜20-30K may be due tothe flux pinning of decoupled two-dimensional pancake vortices by the dislocation networks. In light of this, we have performed an insitu observation on the dislocation networks precisely at the same region before and after annealing in air, vacuumand oxygen, in order to verify whether the dislocation networks change with varying oxygen content Inall cases, we have not found any noticeable changes in dislocation structure, regardless of the drastic changes in Tc and the anomalous magnetization. Therefore, it does not appear that the anomalous peak in the M-H loops is controlled by the basal-plane dislocation networks.

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