Thermal stability of dispersoids in ferritic oxide-dispersion-strengthened alloys

Oxide dispersion strengthened ferritic steels (so-called nanostructured ferritic alloys, NFAs), which are candidate structural materials in next generation nuclear power plant, have attracted much attention during recent years. In this work, iron oxide as oxygen carrier and titanium, yttrium hydrides were together mechanically milled with Fe-14Cr-3W gas-atomized powder. The thermal stability and recrystallization behaviour of the as-milled ferritic powder were studied by means of metallography, SEM, TEM and microhardness test. After ball milling for 48h, complete solid solution of bcc-Fe was formed in the as-milled powder. The thermal analysis results show that dispersed oxides with an average diameter of 5nm precipitate from the supersaturated matrix at about 850 °C. During annealing at temperatures from 800 to 1000 °C, a large number of equiaxed grains as fine as few hundreds of microns were found embedding in the matrix; the recrystallized grains stay quite stable and show minor dependence on annealing temperature and time. After being heated to 1200 °C for extended time, abnormal grain growth took place and resulted in bimodal grained structure. The effect of secondary particles on the thermal stability and recrystallization behavior of the ferritic steel was also discussed.

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Formation and thermal stability of an oxide dispersion in a rapidly solified Ti-Er alloy

Scripta Metallurgica ◽

10.1016/0036-9748(83)90271-5 ◽

1983 ◽

Vol 17 (7) ◽

pp. 963-966 ◽

Cited By ~ 25

Author(s):

D.G. Konitzer ◽

B.C. Muddle ◽

H.L. Fraser

Keyword(s):

Thermal Stability ◽

Oxide Dispersion ◽

Thermal Stability Of

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Ultrastrong nanocrystalline oxide-dispersion-strengthened ferritic alloy with exceptional thermal stability

Materials Science and Engineering A ◽

10.1016/j.msea.2021.141616 ◽

2021 ◽

pp. 141616

Author(s):

X.C. Cai ◽

J.J. Liang ◽

L.D. Xu ◽

B.R. Sun ◽

Z. Chen ◽

...

Keyword(s):

Thermal Stability ◽

Oxide Dispersion Strengthened ◽

Oxide Dispersion ◽

Ferritic Alloy ◽

Nanocrystalline Oxide

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The Ordered Phase Formation in Ti-Al-Ga Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069193 ◽

1970 ◽

Vol 28 ◽

pp. 440-441

Author(s):

Shiro Fujishiro ◽

Harold L. Gegel

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Titanium Alloys ◽

Growth Kinetics ◽

Stoichiometric Composition ◽

Good Potential ◽

Alpha Titanium ◽

Cold Rolled ◽

Kinetics Of ◽

Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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Fine Microstructure of a Mechanically Alloyed Oxide Dispersion Strengthened Nickel-Base Superalloy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100079012 ◽

1977 ◽

Vol 35 ◽

pp. 298-299

Author(s):

Jordi Marti ◽

Timothy E. Howson ◽

David Kratz ◽

John K. Tien

Keyword(s):

Solid Solution ◽

Volume Fraction ◽

Stress Rupture ◽

Oxide Dispersion Strengthened ◽

Solid Solution Alloy ◽

Oxide Dispersion ◽

Creep And Stress Rupture ◽

Mechanically Alloyed ◽

Fine Microstructure ◽

Nickel Base

The previous paper briefly described the fine microstructure of a mechanically alloyed oxide dispersion strengthened nickel-base solid solution. This note examines the fine microstructure of another mechanically alloyed system. This alloy differs from the one described previously in that it is more generously endowed with coherent precipitate γ forming elements A1 and Ti and it contains a higher volume fraction of the finely dispersed Y2O3 oxide. An interesting question to answer in the comparative study of the creep and stress rupture of these two ODS systems is the role of the precipitate γ' in the mechanisms of creep and stress rupture in alloys already containing oxide dispersoids.The nominal chemical composition of this alloy is Ni - 20%Cr - 2.5%Ti - 1.5% A1 - 1.3%Y203 by weight. The system receives a three stage heat treatment-- the first designed to produce a coarse grain structure similar to the solid solution alloy but with a smaller grain aspect ratio of about ten.

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Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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