Transport properties of doped silicon oxycarbide microcrystalline films produced by spatial separation techniques

1996 ◽  
Vol 41-42 ◽  
pp. 493-517 ◽  
Author(s):  
R MARTINS ◽  
M VIEIRA ◽  
I FERREIRA ◽  
E FORTUNATO ◽  
L GUIMARAES
Keyword(s):  
Transport Properties ◽  
Spatial Separation ◽  
Silicon Oxycarbide ◽  
Separation Techniques ◽  
Doped Silicon

The Structure and Composition of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

1994 ◽  
Vol 358 ◽  
Author(s):  
R. Martins ◽  
M. Vieira ◽  
I. Ferreira ◽  
E. Fortunato
Keyword(s):  
Experimental Data ◽  
Spatial Separation ◽  
Wide Band ◽  
Silicon Oxycarbide ◽  
Preparation Process ◽  
Microcrystalline Silicon ◽  
Wide Band Gap ◽  
Doped Silicon ◽  
System 1

ABSTRACTThis work presents experimental data concerning the role of the oxygen partial pressure used during the preparation process, on the structure, composition and optoelectronic properties of wide band gap doped microcrystalline silicon oxycarbide films produced by a TCDDC system [1].

Synthesis and luminescent properties of novel Eu2+-doped silicon oxycarbide glasses

2004 ◽  
Vol 24 (4) ◽  
pp. 601-605 ◽  
Author(s):  
Yujun Zhang ◽  
Alberto Quaranta ◽  
Gian Domenico Soraru
Keyword(s):  
Luminescent Properties ◽  
Silicon Oxycarbide ◽  
Doped Silicon ◽  
Silicon Oxycarbide Glasses

Dense nanosized europium silicate clusters induced light emission enhancement in Eu-doped silicon oxycarbide films

2017 ◽  
Vol 694 ◽  
pp. 946-951 ◽  
Author(s):  
Zhenxu Lin ◽  
Rui Huang ◽  
Huaipei Wang ◽  
Yan Wang ◽  
Yi Zhang ◽  
...  
Keyword(s):  
Light Emission ◽  
Silicon Oxycarbide ◽  
Emission Enhancement ◽  
Doped Silicon

Enhanced electromagnetic wave absorption of Fe‐doped silicon oxycarbide nanocomposites

2019 ◽  
Vol 103 (3) ◽  
pp. 1732-1743 ◽  
Author(s):  
Bin Du ◽  
Junjie Qian ◽  
Ping Hu ◽  
Chao He ◽  
Mei Cai ◽  
...  
Keyword(s):  
Electromagnetic Wave ◽  
Silicon Oxycarbide ◽  
Electromagnetic Wave Absorption ◽  
Wave Absorption ◽  
Doped Silicon

Magnetic and electronic transport properties of Mn-doped silicon

2006 ◽  
Vol 140 (3-4) ◽  
pp. 192-196 ◽  
Author(s):  
S.B. Ma ◽  
Y.P. Sun ◽  
B.C. Zhao ◽  
P. Tong ◽  
X.B. Zhu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Electronic Transport Properties ◽  
Doped Silicon ◽  
Mn Doped

Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

1994 ◽  
Vol 336 ◽  
Author(s):  
R. Martins ◽  
I. Ferreira ◽  
E. Fortunato ◽  
M. Vieira
Keyword(s):  
Band Gap ◽  
Spatial Separation ◽  
Wide Band ◽  
Silicon Oxycarbide ◽  
Wide Band Gap ◽  
Deposition Chamber ◽  
Optical Gap ◽  
Composition Structure ◽  
Partial Oxygen

ABSTRACTSilicon oxycarbide microcrystalline layers, n- and p-doped, highly conductive and highly transparent have been produced using a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system. The films exhibit suitable properties for optoelectronic applications where wide band gap materials with required conductivity and stability are needed. In this paper we present the role of partial oxygen pressure (po2) in controlling the composition, structure and transport properties (conductivity, σd and optical gap, Eop) of silicon oxycarbide microcrystalline layers.

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