Characterization of Grain Boundaries in Bicrystalline Thin Films

1982 ◽  
pp. 113-161
Author(s):  
F. COSANDEY ◽  
C.L. BAUER
Keyword(s):  
Thin Films ◽  
Grain Boundaries

Special grain boundaries in YBa2Cu3O7-x

1988 ◽  
Vol 46 ◽  
pp. 870-871
Author(s):  
L.A. Tietz ◽  
C.B. Carter ◽  
D.K. Lathrop ◽  
S.E. Russek ◽  
R.A. Buhrman
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Mechanical Stability ◽  
Yttria Stabilized Zirconia ◽  
High Angle ◽  
Stabilized Zirconia ◽  
Routine Manner ◽  
Cubic Materials ◽  
Oriented Single Crystal

Much attention has recently been paid to the characterization of twin boundaries in YBa2Cu3O7-x (YBCO). However, in polycrystalline samples other high-angle grain boundaries may have a much more significant effect on, not only the superconducting behavior, but also the chemical and mechanical stability of the material. In the present study, attention has therefore also been focussed on several types of low-angle and high-angle grain boundaries. Such boundaries are frequently found in thin films of this material which are grown on {001}-oriented, single-crystal yttria-stabilized zirconia (YSZ) or magnesium oxide by electron beam co-evaporation of the metals in an oxygen atmosphere. The fact that over most of the substrate these films are oriented epitactically with respect to the zirconia substrate means that these high-angle grain boundaries can be characterized in a relatively routine manner using selected-area diffraction. The high-angle boundaries observed in this study include those produced by 23.5°, 29°, and 45° rotations about [001] and 90° rotations about [100] or [010]. These boundaries are compared to special high-angle grain boundaries in cubic materials.

Grain boundaries characterization of semiconducting BaSi2 thin films on a polycrystalline Si substrate

2014 ◽  
Author(s):  
Masakazu Baba ◽  
Kosuke O. Hara ◽  
Kentaro Watanabe ◽  
Weijie Du ◽  
Daichi Tsukahara ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Si Substrate

scholarly journals Tem Characterization of Grain Boundaries in Mazed Bicrystal Films of Aluminum

1991 ◽  
Vol 229 ◽  
Author(s):  
U. Dai-Men ◽  
K. H. Westmacott
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Grain Boundaries ◽  
Triple Junctions ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Tem Characterization ◽  
Crystallographic Symmetry ◽  
Degree Of Anisotropy

AbstractThe structure and faceting behavior of near-90° <110> tilt grain boundaries in thin films of aluminum with a unique mazed bicrystal geometry is characterized by conventional, highresolution and high-voltage electron microscopy. In this microstructure the absence of triple junctions allows grain boundaries to facet in optimum orientation (inclination) during annealing. The degree of anisotropy of the boundaries is expressed in the form of a rose plot. Small local deviations in misorientation are shown to be necessary to accommodate optimum boundary segments. The crystallographic symmetry inherent in this microstructure is apparent and utilizedthroughout the analysis.

High-resolution electron microscopy of nanostructured materials

1995 ◽  
Vol 53 ◽  
pp. 172-173
Author(s):  
M. José-Yacamán
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Nanostructured Materials ◽  
High Resolution Electron Microscopy ◽  
Hrem Image ◽  
Small Particles ◽  
Resolution Electron ◽  
Nanophase Materials

Electron microscopy is a fundamental tool in materials characterization. In the case of nanostructured materials we are looking for features with a size in the nanometer range. Therefore often the conventional TEM techniques are not enough for characterization of nanophases. High Resolution Electron Microscopy (HREM), is a key technique in order to characterize those materials with a resolution of ~ 1.7A. High resolution studies of metallic nanostructured materials has been also reported in the literature. It is concluded that boundaries in nanophase materials are similar in structure to the regular grain boundaries. That work therefore did not confirm the early hipothesis on the field that grain boundaries in nanostructured materials have a special behavior. We will show in this paper that by a combination of HREM image processing, and image calculations, it is possible to prove that small particles and coalesced grains have a significant surface roughness, as well as large internal strain.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Characterization of Serrated Grain Boundaries in Ni-Based Alloy 690

2014 ◽  
Vol 52 (9) ◽  
pp. 695-704
Author(s):  
Yun Soo Lim ◽  
Dong Jim Kim ◽  
Seong Sik Hwang
Keyword(s):  
Grain Boundaries ◽  
Alloy 690
Sign in / Sign up

Export Citation Format

Share Document