Heterogeneous Chemical Kinetics by Modulated Molecular Beam Mass Spectrometry

Author(s):  
DONALD R. OLANDER
1989 ◽  
Vol 145 ◽  
Author(s):  
T.R. Omstead ◽  
S. Brandon ◽  
M. Hoveland ◽  
K.F. Jensen ◽  
D.A. Bohling ◽  
...  

AbstractThe chemical kinetics of two new organometallic arsenic substitutes, tris-trifluoromethylarsenic (As(CF3)3) and phenylarsine (PhAsH2), for use in the MOCVD of GaAs have been characterized through the use of microbalance gravimetry and molecular beam mass spectrometry. Both growth rate and gas-phase cracking studies demonstrate that phenylarsine interacts only slightly with the common gallium precursors, which may make it a useful alternative to arsine. Growth with tris-trifluoromethylarsenic is achieved only at low V/III ratios and with pressures above 250 Torr. The compound etches GaAs under most conditions.


1993 ◽  
Vol 334 ◽  
Author(s):  
I.B. Graff ◽  
R.A. Pugliese ◽  
P.R. Westmoreland

AbstractMolecular-beam mass spectrometry has been used to study plasma-enhanced chemical vapor deposition (PECVD) of diamondlike carbon films. A threshold-ionization technique was used to identify and quantify species in the plasma. Mole fractions of H, H2, CH4, C2H2, C2H6 and Ar were measured in an 83.3% CH4/Ar mixture at a pressure of 0.1 torr and a total flow of 30 sccm. Comparisons were made between mole fractions measured at plasma powers of 25W and 50W. These results were compared to measured concentration profiles and to film growth rates.


1994 ◽  
Vol 99 (2) ◽  
pp. 323-330 ◽  
Author(s):  
David C. Dayton ◽  
Cynthia M. Faust ◽  
William R. Anderson ◽  
Rosario C. Sausa

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