A rapid compression machine coupled with time-resolved molecular beam mass spectrometry for gas-phase kinetics studies

2021 ◽  
Vol 92 (8) ◽  
pp. 084103
Author(s):  
Shiqing Kang ◽  
Wanxiong Liao ◽  
Zhaohan Chu ◽  
Bin Yang
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Molecular Beam ◽  
Rapid Compression Machine ◽  
Time Resolved ◽  
Molecular Beam Mass Spectrometry ◽  
Gas Phase Kinetics ◽  
Kinetics Studies ◽  
Rapid Compression

Repetitively sampled time-of-flight mass spectrometry for gas-phase kinetics studies

1999 ◽  
Vol 70 (8) ◽  
pp. 3259-3264 ◽  
Author(s):  
Christopher Fockenberg ◽  
Herbert J. Bernstein ◽  
Gregory E. Hall ◽  
James T. Muckerman ◽  
Jack M. Preses ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Time Of Flight ◽  
Gas Phase Kinetics ◽  
Kinetics Studies ◽  
Flight Mass Spectrometry

Gas Phase and Surface Reactions of Organometallic Arsenic Sources

1989 ◽  
Vol 145 ◽  
Author(s):  
T.R. Omstead ◽  
S. Brandon ◽  
M. Hoveland ◽  
K.F. Jensen ◽  
D.A. Bohling ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Growth Rate ◽  
Gas Phase ◽  
Chemical Kinetics ◽  
Molecular Beam ◽  
Surface Reactions ◽  
Molecular Beam Mass Spectrometry ◽  
The Common ◽  
Kinetics Of

AbstractThe chemical kinetics of two new organometallic arsenic substitutes, tris-trifluoromethylarsenic (As(CF3)3) and phenylarsine (PhAsH2), for use in the MOCVD of GaAs have been characterized through the use of microbalance gravimetry and molecular beam mass spectrometry. Both growth rate and gas-phase cracking studies demonstrate that phenylarsine interacts only slightly with the common gallium precursors, which may make it a useful alternative to arsine. Growth with tris-trifluoromethylarsenic is achieved only at low V/III ratios and with pressures above 250 Torr. The compound etches GaAs under most conditions.

Molecular Beam Mass Spectrometry Studies of the Thermal Decomposition of Tetrakis(dimethylamino)Titanium

1999 ◽  
Vol 606 ◽  
Author(s):  
Carmela C. Amato-Wierda ◽  
Edward T. Norton ◽  
Derk A. Wierda
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Flow Reactor ◽  
Chemical Vapor ◽  
Molecular Beam Mass Spectrometry ◽  
Gas Phase Chemistry ◽  
Temperature Rate ◽  
Phase Chemistry

AbstractTetrakis(dimethylamino)titanium (TDMAT) is an important precursor for TiN, TiCN, and TiSiN thin films in chemical vapor deposition. In order to better understand how the gas phase chemistry influences the formation of these films, the decomposition of TDMAT has been studied in a high-temperature flow reactor (HTFR) by molecular beam mass spectrometry (MBMS). Two kinetic regimes have been observed as a function of temperature. Rate expressions and mechanistic implications will be presented. Further studies are in progress to identify the gas phase species relevant to the decomposition mechanism of TDMAT.

Gas phase analysis of TiCl4 plasma processes by molecular beam mass spectrometry

2001 ◽  
Vol 148 (2-3) ◽  
pp. 256-261 ◽  
Author(s):  
Derk Andrew Wierda ◽  
Chandra M Reddy ◽  
Carmela C Amato-Wierda
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Phase Analysis ◽  
Molecular Beam ◽  
Molecular Beam Mass Spectrometry
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