In previous studies of high dose He implantation of metals, observations of the resulting surface deformation were made after specific dose levels were attained. The present work describes a recently constructed system which allows scanning electron microscopy observation during implantation. A number of advantages can be gained by this approach. First, considerably more data can be obtained on a given sample so that, for example, the precise dose dependence of surface deformation can be determined. The technique also allows direct observation of deformation either above or below room temperature andin addition, quantitative information on the rates of blister formation and growth can be obtained. The rapidity with which surface features develop during implantation requires continuous and rapid storage of the sample image. Commercially available video recording equipment, with appropriate modification, has been used for this purpose.In preliminary studies, a comparison has been made of surface deformation due to He implantation of a hydride (TiH2), annealed Ti metal, and cold worked Ti.