In situ investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO2

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589211 ◽

1996 ◽

Vol 14 (3) ◽

pp. 1687 ◽

Author(s):

Y. Wang

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

In Situ Investigation ◽

Resonance Plasma

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Effect of nitrogen flow on the properties of carbon nitride films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Vacuum ◽

10.1016/j.vacuum.2021.110223 ◽

2021 ◽

pp. 110223

Author(s):

Sixu Lin ◽

Dong Xie ◽

Yongliang Tang ◽

Yiwen Wang ◽

Fengjuan Jing ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Carbon Nitride ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Nitrogen Flow ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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c-Axis oriented AlN films prepared on diamond film substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)01810-3 ◽

2002 ◽

Vol 235 (1-4) ◽

pp. 333-339 ◽

Author(s):

H Gong ◽

X Jiang

Keyword(s):

Chemical Vapor Deposition ◽

Diamond Film ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Film Substrate ◽

Resonance Plasma

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Low‐temperature homoepitaxial growth of Si by electron cyclotron resonance plasma enhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.114962 ◽

1995 ◽

Vol 67 (7) ◽

pp. 971-973 ◽

Author(s):

J. L. Rogers ◽

P. S. Andry ◽

W. J. Varhue ◽

P. McGaughnea ◽

E. Adams ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Homoepitaxial Growth ◽

Resonance Plasma

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Preparation of Bismuth Titanate Films by Electron Cyclotron Resonance Plasma Sputtering-Chemical Vapor Deposition

Journal de Physique IV (Proceedings) ◽

10.1051/jphyscol:1995580 ◽

1995 ◽

Vol 05 (C5) ◽

pp. C5-671-C5-677

Author(s):

H. Masumoto ◽

T. Hirai

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Bismuth Titanate ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Resonance Plasma

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Electron Cyclotron Resonance Plasma Sources and Their Use in Plasma-Assisted Chemical Vapor Deposition of Thin Films

Physics of Thin Films - Plasma Sources for Thin Film Deposition and Etching ◽

10.1016/b978-0-08-092513-4.50007-6 ◽

1994 ◽

pp. 121-233 ◽

Author(s):

OLEG A. POPOV

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sources ◽

Resonance Plasma

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Characteristics of amorphous and polycrystalline silicon films deposited at 120 °C by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581195 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1912-1916 ◽

Author(s):

Sanghoon Bae ◽

A. Kaan Kalkan ◽

Shangcong Cheng ◽

Stephen J. Fonash

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Polycrystalline Silicon ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Polycrystalline Silicon Films ◽

Resonance Plasma

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A comparative study on the properties of TiN films prepared by chemical vapor deposition enhanced by r.f. plasma and by electron cyclotron resonance plasma

Thin Solid Films ◽

10.1016/s0040-6090(96)09098-0 ◽

1997 ◽

Vol 292 (1-2) ◽

pp. 124-129 ◽

Author(s):

Jong-Seok Kim ◽

Byung-Hyuk Jun ◽

Eung-Jik Lee ◽

Chan-Yong Hwang ◽

Won-Jong Lee

Keyword(s):

Chemical Vapor Deposition ◽

Comparative Study ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Tin Films ◽

Resonance Plasma

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Role of ions in electron cyclotron resonance plasma-enhanced chemical vapor deposition of silicon dioxide

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588003 ◽

1995 ◽

Vol 13 (1) ◽

pp. 118 ◽

Author(s):

K. L. Seaward

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Low temperature epitaxial growth of Ge using electron‐cyclotron‐resonance plasma‐assisted chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.351189 ◽

1992 ◽

Vol 71 (4) ◽

pp. 1949-1954 ◽

Author(s):

W. J. Varhue ◽

J. M. Carulli ◽

G. G. Peterson ◽

J. A. Miller

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effects of Seed Layers on the Characteristics of (Pb,La)(Zr,Ti)O3Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.6909 ◽

1997 ◽

Vol 36 (Part 1, No. 11) ◽

pp. 6909-6914 ◽

Author(s):

Joong-Shik Shin ◽

Won-Jong Lee

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma ◽

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