Dry Etching of InGaP and AlInP in CH4/H2/Ar

1996 ◽  
Vol 421 ◽  
Author(s):  
J. W. Lee ◽  
S. J. Pearton ◽  
C. J. Santana ◽  
E. S. Lambers ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Low Flow ◽  
Flow Rates ◽  
Ecr Plasma ◽  
Order Of Magnitude ◽  
Etch Stop ◽  
Etch Rates ◽  
Ecr Plasma Etching

AbstractElectron Cyclotron Resonance (ECR) plasma etching with additional if-biasing produces etch rates ≥ 2,500Å/min for InGaP and AlInP in CH4/H2/Ar. These rates are an order of magnitude or much higher than for reactive ion etching conditions (RIE) carried out in the same reactor. N2 addition to CH4/H2/Ar can enhance the InGaP etch rates at low flow rates, while at higher concentrations it provides an etch-stop reaction. The InGaP and AtlnP etched under ECR conditions have somewhat rougher morphologies and different stoichiometries up to ˜200Å from the surface relative to the RIE samples.

CH4 :H2 :Ar rf/ECR Plasma Etching of GaAs and InP

1991 ◽  
Vol 223 ◽  
Author(s):  
Victor. J. Law ◽  
S. G. Ingram ◽  
G. A. C. Jones ◽  
R. C. Grimwood ◽  
H. Royal
Keyword(s):  
Plasma Etching ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Kinetic Studies ◽  
High Electron Mobility Transistor ◽  
Rf Plasma ◽  
High Electron ◽  
Ecr Plasma ◽  
Etch Rates ◽  
Ecr Plasma Etching

ABSTRACTA comparative study of CH4 :H2 , and CH4 :H2 :Ar rf-plasma and microwave electron cyclotron resonance (ECR) plasma etching of GaAs and InP is presented. The study is in two parts;(i) Kinetic studies of GaAs and InP etch rates as a function of the constituent gas flow rates, applied rf and microwave powers, substrate temperature and position. The results indicate that CH4 :H2 :Ar ECR etching of GaAs is 10× more efficient in the utilisation of the CH4 precursor gas than rf-plasmas. However, the absolute etch rates are lower (70 nm min−1 for rf and 25 nm min−1 for rf biassed ECR-plasmas).The effect of etching conditions on InP morphology is also examined.(ii) The study of electrical “damage” in GaAs/AlGaAs high electron mobility transistor (HEMT) Hall bar structures, was investigated by ECR-plasma etching off the top GaAs capping layer. Results indicate that ECR-plasma etching with an rf-bias between 0V and −30V does not significantly effect the electrical characteristics of such devices at 300K, with some degredation at 1.2 K.

HI/H2 ECR Plasma Etching of III-V Semiconductors

1992 ◽  
Vol 268 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. Katz ◽  
F. Ren ◽  
T. R. Fullowan ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Electron Spectroscopy ◽  
Dry Etching ◽  
Hydrogen Passivation ◽  
Near Surface ◽  
Ecr Plasma ◽  
Order Of Magnitude ◽  
Polymer Deposition ◽  
Etch Rates ◽  
Surface Morphologies

ABSTRACTHI/H2/Ar discharges are shown to be universal etchants for rn-V semiconductors, giving rise to highly anisotropic features with smooth surface morphologies. At loy dc self bia:s (-100V) and low pressure (1 mTorr), etch rates for all III-V materials of >2000Å min−1 are possible for high HI percentages in the discharges, whereas rates greater than 1 Åm min−1 are obtained at higher pressures and dc biases. These etch rates are approximately an order of magnitude faster than for CH4/H2/Ar mixtures under the same conditions and there is no polymer deposition on the mask or within the reactor chamber with HI/H2/Ar. Auger Electron Spectroscopy reveals residue-free, stoichiometric surfaces after dry etching in this mixture. As i result, photoluminescence intensities from dry etched samples remain high with little apparent damage introduction. Changes in the near-surface carrier concentration due to hydrogen passivation effects are also negligible with HI-based mixtures in comparison to CH4-based dry etching.

Comparison of Microwave ECR and RF Plasmas for Dry Etching of Single Crystal 6H-SiC

1994 ◽  
Vol 339 ◽  
Author(s):  
J. R. Flemish ◽  
K. Xie ◽  
W. Buchwald ◽  
L. Casas ◽  
J. H. Zhao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Plasma Etching ◽  
Electron Cyclotron Resonance ◽  
Schottky Diodes ◽  
Substrate Bias ◽  
Rf Plasmas ◽  
Ecr Plasma ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Etch Rates

ABSTRACTElectron cyclotron resonance (ECR) plasma etching of single crystal 6H-SiC has been investigated using a CF4/O2 gas mixture and compared to conventional reactive ion etching (RIE) in a radio frequency (13.56 MHz) reactor. The use of ECR results in higher etch rates, lower levels of bias and smoother etched surfaces than rf-RIE. ECR etch rates exceeding 100 nm/min have been obtained at a substrate bias of-100 V. Etch rate and surface morphology have been studied as a function of pressure, bias and power. Auger electron spectroscopy shows that ECR etching leaves no residues unlike rf-RIE which leaves residues containing Al, F, O and C. The current-voltage and capacitance-voltage measurements of Schottky diodes show that there is far less damage induced by ECR etching compared to rf-RIE.

Dry Etching Techniques and Chemistries for III-V Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
S. J. Pearton
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Surface Damage ◽  
Dry Etching ◽  
Near Surface ◽  
Lattice Disorder ◽  
Ecr Plasma ◽  
Surface Morphologies

ABSTRACTDry etching of HI-V materials using both Cl-based (CCl2F2, SiCl4, BCl3, Cl2) and CH4/H2 discharges will be reviewed. The etch rates using chlorine-based mixtures are generally faster than those utilizing CH4/H2, but the latter gives smoother surface morphologies for In-containing compounds. The use of microwave (2.45 GHz) electron cyclotron resonance (ECR) discharges minimizes the depth of lattice disorder resulting from dry etching, relative to conventional RF (13.56 MHz) discharges. Recent results on the systematics of ECR plasma etching of both In- and Ga-based III-V semiconductors using CCl2F2/O2 and CH4/H2 mixtures will be discussed, including the determination of the maximum self-biases allowable which do not induce near-surface damage to the semiconductor. A further key issue is the prevention of changes in the surface stoichiometry of materials such as InP, where the lattice constituents may have considerably different volatilities in the particular discharge.

ECR Plasma Etching Technology for ULSIs

1991 ◽  
Vol 223 ◽  
Author(s):  
Seiji Samukawa
Keyword(s):  
Plasma Etching ◽  
High Selectivity ◽  
Electron Cyclotron Resonance ◽  
Etching Rate ◽  
High Rate ◽  
Ion Energy ◽  
Ecr Plasma ◽  
High Etching Rate ◽  
Phosphorus Doped ◽  
Ecr Plasma Etching

ABSTRACTA new electron cyclotron resonance (ECR) plasma etching technology has been developed to realize simultaneously high selectivity, high rate and anisotropic etching for phosphorus doped poly-Si and WSix/poly-Si at a low ion energy. In this technology, a substrate is located around the ECR position (875 gauss position) in an ECR plasma. As a result of ECR position etching, under the low pressure of 5 × 10−4 Torr, a high etching rate and an infinite selectivity to SiO2 etching are realized by using C12/O2 and Cl2/O2/SF6 etching gas.

Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

1990 ◽  
Vol 56 (15) ◽  
pp. 1424-1426 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. P. Kinsella ◽  
D. Johnson ◽  
C. Constantine
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

ECR Plasma Etching with Heavy Halogen Ions

1990 ◽  
Vol 29 (Part 1, No. 10) ◽  
pp. 2223-2228 ◽  
Author(s):  
Nobuo Fujiwara ◽  
Hisaharu Sawai ◽  
Masahiro Yoneda ◽  
Kyusaku Nishioka ◽  
Haruhiko Abe
Keyword(s):  
Plasma Etching ◽  
Ecr Plasma ◽  
Ecr Plasma Etching
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