Formation of Intermetallic Compounds on Refractory Metals in Aluminum-Silicon Liquid

1998 ◽  
pp. 299-302 ◽  
Author(s):  
Makoto Nanko ◽  
Akio Takahashi ◽  
Takashi Ogura ◽  
Akihiko Kitahara ◽  
Katsuyuki Yanagihara ◽  
...  
Keyword(s):  
Intermetallic Compounds ◽  
Refractory Metals ◽  
Aluminum Silicon

EBSD Study of Crystallographic Identification on Fe-Al-Si Intermetallic Phases in Aluminide Coatings on Mild Steels

2009 ◽  
Vol 79-82 ◽  
pp. 907-910
Author(s):  
Wei Jen Cheng ◽  
Chaur Jeng Wang
Keyword(s):  
Intermetallic Compounds ◽  
Electron Backscatter Diffraction ◽  
Intermetallic Layer ◽  
Silicon Steel ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
X Ray ◽  
Aluminide Coatings ◽  
Backscatter Diffraction ◽  
Aluminum Silicon

Mild steels were coated by hot-dipping in molten aluminum and aluminum-silicon baths at 700 °C for 180 seconds. Phase identification of the Fe-Al or Fe-Al-Si intermetallic compounds in the hot-dipped aluminide steel was carried out by using a combination of scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and electron backscatter diffraction (EBSD). The results showed that the aluminide layer of the hot-dipped aluminum steel possessed a thicker intermetallic layer than that of the hot-dipped aluminum-silicon steel which was composed of minor monoclinic FeAl3 and major orthorhombic Fe2Al5. The intermetallic layer of the hot-dipped aluminum-silicon steel was composed of not only the same FeAl3 and Fe2Al5 phases in the hot-dipped aluminum steel but also Fe-Al-Si intermetallic compounds of hexagonal Al7Fe2Si and tetragonal (Al,Si)5Fe3.

The Properties and Uses of Refractory Metals and Their Alloys

1993 ◽  
Vol 322 ◽  
Author(s):  
C.L. Briant
Keyword(s):  
Intermetallic Compounds ◽  
Recent Work ◽  
Refractory Metal ◽  
Refractory Metals ◽  
And Tungsten

AbstractThis paper reviews the problems that have limited the applications of refractory metals and their alloys. It also presents examples from recent work that has been done to overcome these problems. The work discussed concerns the refractory metals niobium, tantalum, molybdenum, and tungsten and alloys based on these elements. Recent results on intermetallic compounds that contain a refractory metal and composites that are made of refractory metals and their intermetallics are also presented.

scholarly journals Electrodeposition of alloys or compounds in molten salts and applications

2003 ◽  
Vol 39 (1-2) ◽  
pp. 177-200 ◽  
Author(s):  
P. Taxil ◽  
P. Chamelot ◽  
L. Massot ◽  
C. Hamel
Keyword(s):  
Rare Earth ◽  
Intermetallic Compound ◽  
Intermetallic Compounds ◽  
Molten Salts ◽  
High Technology ◽  
Refractory Metals ◽  
New Materials ◽  
Reactive Metal ◽  
Electrolyte Interface

This article deals with the different modes of preparation of alloys or intermetallic compounds using the electrodeposition in molten salts, more particularly molten alkali fluorides. The interest in this process is to obtain new materials for high technology, particularly the compounds of reactive components such as actinides, rare earth and refractory metals. Two ways of preparation are considered: (i) electrocoating of the more reactive metal on a cathode made of the noble one and reaction between the two metals in contact, and (ii) electrocoating on an inert cathode of the intermetallic compound by coreduction of the ions of each elements. The kinetic is controlled by the reaction at the electrolyte interface. A wide bibliographic survey on the preparation of various compounds (intermetallic compounds, borides, carbides?) is given and a special attention is paid to the own experience of the authors in the preparation of these compounds and interpretation of their results.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Sign in / Sign up

Export Citation Format

Share Document