Chemical, Structural and Electronic Characterization of Compound Semiconductor Surfaces and Interfaces by X-ray Photoelectron Spectroscopy and Diffraction Techniques

1995 ◽  
pp. 613-652 ◽  
Author(s):  
Scott A. Chambers
Keyword(s):  
Photoelectron Spectroscopy ◽  
Compound Semiconductor ◽  
Semiconductor Surfaces ◽  
X Ray ◽  
Surfaces And Interfaces

In situ characterization of the nitridation of AIII–BV semiconductor surfaces by means of X-ray photoelectron spectroscopy

2001 ◽  
Vol 179 (1-4) ◽  
pp. 196-202 ◽  
Author(s):  
J.-D Hecht ◽  
F Frost ◽  
T Chassé ◽  
D Hirsch ◽  
H Neumann ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Semiconductor Surfaces ◽  
In Situ Characterization ◽  
X Ray

Characterization of Semiconductor Surfaces and Interfaces by X-Ray Reflectivity Measurements

1993 ◽  
Vol 143-147 ◽  
pp. 561-566 ◽  
Author(s):  
W. Plotz ◽  
V. Holy ◽  
W.V.D. Hoogenhof ◽  
W. Ahrer ◽  
N. Frank ◽  
...  
Keyword(s):  
Semiconductor Surfaces ◽  
X Ray ◽  
Surfaces And Interfaces

X-ray characterization of semiconductor surfaces and interfaces

1994 ◽  
Vol 4 (9) ◽  
pp. 1565-1571 ◽  
Author(s):  
W. Plotz ◽  
V. Holy ◽  
W. V. D. Hoogenhof ◽  
K. Lischka
Keyword(s):  
Semiconductor Surfaces ◽  
X Ray ◽  
Surfaces And Interfaces

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

Monitoring and characterization of creation of geopolymers prepared from fly ash and metakaolin by X-ray photoelectron spectroscopy method

2014 ◽  
Vol 34 (3) ◽  
pp. 841-849 ◽  
Author(s):  
M. Kanuchova ◽  
L. Kozakova ◽  
M. Drabova ◽  
M. Sisol ◽  
A. Estokova ◽  
...  
Keyword(s):  
Fly Ash ◽  
Photoelectron Spectroscopy ◽  
Spectroscopy Method ◽  
X Ray

Characterization of columns grown during KrF laser micromachining of Al2O3–TiC ceramics

2003 ◽  
Vol 18 (5) ◽  
pp. 1123-1130 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Laser Pulses ◽  
Formation Mechanisms ◽  
X Ray ◽  
Reducing Conditions ◽  
Transmission Electron ◽  
Column Formation ◽  
Krf Laser

This paper aims to contribute to the understanding of column formation mechanisms in Al2O3–TiC ceramics micromachined using excimer lasers. Chemical and structural characterization of columns grown in Al2O3–TiC composite processed with 200 KrF laser pulses at 10 J/cm2 was carried out by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analysis. Fully developed columns consist of a core of unprocessed material surrounded by an outer layer of Al2TiO5, formed in oxidizing conditions, and an inner layer, formed in reducing conditions, composed of TiC and Al3Ti or an AlTi solid solution. Possible mechanisms of column formation are discussed.

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