Characterization of Semiconductor Surfaces and Interfaces by X-Ray Reflectivity Measurements

The application of X-rays to the structural characterization of surfaces and interfaces, in situ and in UHV, is discussed on selected examples. Grazing incidence X-ray diffraction is not only a very powerful technique for quantitatively investigating the atomic structure of surfaces and interfaces, but is also very useful for providing information on the interfacial registry for coherent interfaces or on the strain deformation, island and grain sizes for incoherent epilayers.

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Characterization of indium tin oxide surfaces and interfaces using low intensity x-ray photoemission spectroscopy

Journal of Applied Physics ◽

10.1063/1.2361089 ◽

2006 ◽

Vol 100 (9) ◽

pp. 093719 ◽

Cited By ~ 34

Author(s):

Y. Yi ◽

J. E. Lyon ◽

M. M. Beerbom ◽

R. Schlaf

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Photoemission Spectroscopy ◽

Oxide Surfaces ◽

X Ray ◽

Low Intensity ◽

Surfaces And Interfaces

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Novel versatile X-ray reflectometer for angle and energy dispersive characterization of liquid and solid surfaces and interfaces

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/0168-9002(94)91188-6 ◽

1994 ◽

Vol 350 (1-2) ◽

pp. 398-405 ◽

Cited By ~ 21

Author(s):

T.H. Metzger ◽

C. Luidl ◽

U. Pietsch ◽

U. Vierl

Keyword(s):

Solid Surfaces ◽

Energy Dispersive ◽

X Ray ◽

Surfaces And Interfaces

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In situ electrochemical impedance spectroscopy/synchrotron radiation grazing incidence X-ray diffraction—A powerful new technique for the characterization of electrochemical surfaces and interfaces

Electrochimica Acta ◽

10.1016/j.electacta.2006.03.030 ◽

2006 ◽

Vol 51 (26) ◽

pp. 5920-5925 ◽

Cited By ~ 15

Author(s):

Roland De Marco ◽

Zhong-Tao Jiang ◽

Jay Martizano ◽

Alex Lowe ◽

Bobby Pejcic ◽

...

Keyword(s):

Electrochemical Impedance Spectroscopy ◽

Synchrotron Radiation ◽

Impedance Spectroscopy ◽

Electrochemical Impedance ◽

Grazing Incidence ◽

X Ray Diffraction ◽

X Ray ◽

Surfaces And Interfaces

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X-Ray Refraction Characterization of the Interface Structure of Ceramics

Volume 4: Manufacturing Materials and Metallurgy; Ceramics; Structures and Dynamics; Controls, Diagnostics and Instrumentation; Education ◽

10.1115/2000-gt-0061 ◽

2000 ◽

Author(s):

Manfred P. Hentschel ◽

Karl-Wolfram Harbich ◽

Joerg Schors ◽

Axel Lange

Keyword(s):

High Performance ◽

Ceramic Composites ◽

Interface Structure ◽

X Rays ◽

X Ray ◽

Surfaces And Interfaces ◽

X Ray Scattering ◽

Monolithic Ceramics ◽

Nondestructive Characterization

Advanced ceramics require specific methods for their nondestructive characterization. X-ray refraction techniques determine the specific surfaces and interfaces of high performance ceramics, composites and other low density materials down to nano-meter dimensions. X-ray refraction occurs due to the interference of phase shifted X-rays in ultra small angle X-ray scattering (USAXS) at objects above 100 nm size. Applications to monolithic ceramics and ceramic composites are presented. The well localized mean pore size of ceramics and the crack growth of ceramic composites are measured non-destructively.

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In situ characterization of the nitridation of AIII–BV semiconductor surfaces by means of X-ray photoelectron spectroscopy

Applied Surface Science ◽

10.1016/s0169-4332(01)00279-3 ◽

2001 ◽

Vol 179 (1-4) ◽

pp. 196-202 ◽

Cited By ~ 38

Author(s):

J.-D Hecht ◽

F Frost ◽

T Chassé ◽

D Hirsch ◽

H Neumann ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Semiconductor Surfaces ◽

In Situ Characterization ◽

X Ray

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Fundamentals of X-Ray Photoemission Spectroscopy

MRS Bulletin ◽

10.1557/s0883769400067245 ◽

1987 ◽

Vol 12 (6) ◽

pp. 60-64 ◽

Cited By ~ 4

Author(s):

F.J. Grunthaner

Keyword(s):

Materials Science ◽

Electronic Materials ◽

Electronic Devices ◽

Photoemission Spectroscopy ◽

Microelectronic Device ◽

X Ray ◽

Surfaces And Interfaces ◽

Manufacturing Process Control ◽

Silicon Based

AbstractRapid progress in the development of new electronic materials and the steady maturation of silicon-based technologies has resulted in a host of novel electronic devices in which the active region of the structure is confined to an interface or a surface. The chemical, electronic, and physical characterization of surfaces and interfaces in semiconductors and insulators is of critical importance to manufacturing process control as well as to the fundamental electron physics and materials science which support microelectronic device research.

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