Hydrothermal Growth of Quartz Under Specific Conditions and the Raman Spectra of Ion Species in a Hydrothermal Growth Solution

2003 ◽  
pp. 365-385
Author(s):  
M. Hosaka
Keyword(s):  
Raman Spectra ◽  
Hydrothermal Growth ◽  
Growth Solution ◽  
Ion Species

Ion Ion Solvent Interactions in Solution .XI. Spectroscopic Studies of Group-2 Perchlorates in Acetone

1986 ◽  
Vol 39 (1) ◽  
pp. 149 ◽  
Author(s):  
DW James ◽  
PG Cutler
Keyword(s):  
Raman Spectra ◽  
Spectroscopic Studies ◽  
Solvent Interactions ◽  
Solvation Numbers ◽  
Steric Crowding ◽  
Component Band ◽  
Group 2 ◽  
Association Equilibria ◽  
High Level ◽  
Ion Species

Solutions of Mg(ClO4)2 and Sr (ClO4)2 in acetone have been studied at various concentrations up to saturation by using infrared absorption, Raman scattering and multinuclear n.m.r (1H, 13C, 17O, 25Mg, 35Cl). Solvation numbers of c. 4.5 (Mg2+) and c. 5.5 (Sr2+) were determined from component band analysis of the c. 800 cm-1 acetone band in the Raman spectra. The solvent shell about the Mg2+ had a high level of steric crowding. There was a small amount of solvent-shared ion-pair formation at all oncentrations in solutions of Mg(ClO4)2 which showed little concentration dependence. In solutions of Sr (ClO4)2 there was evidence for the formation of both solvent-shared associated-ion species and ion-contact species. The solvent-shared species appeared to have two alternative configurations in one of which the anion was both polarized and highly hindered. There was a salt-promoted reaction in which the perchlorate was reduced to chloride and the solution darkened. This reaction prevented the use of Raman spectra to quantify the association equilibria.

Rapid Hydrothermal Growth of ZnO Nanorods on a Magnetron Sputtered Thick ZnO Seed Layer

2019 ◽  
Vol 815 ◽  
pp. 9-14
Author(s):  
Jun Jie Liu ◽  
Ming Quan Liu ◽  
Yan Yi Liu ◽  
Nuo Yuan Wang ◽  
Geng Zhe Shen ◽  
...  
Keyword(s):  
Seed Layer ◽  
Water Solution ◽  
Pure Water ◽  
Critical Role ◽  
Zno Nanorods ◽  
Hydrothermal Growth ◽  
Zno Nanorod ◽  
Average Growth ◽  
Growth Solution ◽  
Magnetic Sputtering

In this work, we report rapid hydrothermal growth of ZnO nanorods on a magnetron sputtered thick ZnO seed layer. The ZnO seed layer on the glass substrarte is monocrystalline and formed by 600 °C annealing for 1 hour after magnetic sputtering. The morphology of the ZnO grain in the ZnO seed layer plays a critical role in the growing of the ZnO nanorods, and the slant ZnO grain results in the slant ZnO nanorod and connected ZnO nonrods. It is found that the average growth of the ZnO nanorods is ~75 nm/minute. The rapid grow rate may be owing to the monocrystallie and the pure water solution of the growth solution.

Single Crystal Raman Spectra of the Phase Transition in KTCNQ

1982 ◽  
Vol 85 (1) ◽  
pp. 297-303 ◽  
Author(s):  
A. D. Bandrauk ◽  
K. D. Truong ◽  
S. Jandl
Keyword(s):  
Phase Transition ◽  
Single Crystal ◽  
Raman Spectra

Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation

2002 ◽  
Vol 716 ◽  
Author(s):  
Alok Nandini ◽  
U. Roy ◽  
A. Mallikarjunan ◽  
A. Kumar ◽  
J. Fortin ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Ion Implantation ◽  
Dielectric Materials ◽  
Dramatic Improvement ◽  
Force Microscopy ◽  
Low Dielectric ◽  
Quantitative Measurements ◽  
Hardness Increase ◽  
Xerogel Films ◽  
Ion Species

AbstractThin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

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